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Semiconductors

23,839 materials

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U4 Co4 B16

semiconductorU4 Co4 B16

U4Co4B16 is an experimental intermetallic compound combining uranium, cobalt, and boron in a specific stoichiometric ratio, belonging to the family of ternary metal borides. This material is primarily of research interest for understanding phase stability and electronic properties in uranium-containing systems, with potential applications in nuclear fuel design, advanced catalysis, or high-temperature structural materials where boride strengthening is desired.

nuclear fuel researchintermetallic compoundshigh-temperature materials
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U4 Co4 Sn2

semiconductorU4 Co4 Sn2

U₄Co₄Sn₂ is a ternary intermetallic compound combining uranium, cobalt, and tin in a fixed stoichiometric ratio, classified as a semiconductor material. This compound is primarily of research and materials science interest rather than established industrial production, with potential applications in advanced electronic and magnetic device research where the unique electronic structure arising from uranium-transition metal-tin interactions may offer novel functional properties. The material exemplifies exploration within the broader family of uranium-based intermetallics, which are investigated for specialized applications requiring materials with distinctive electronic, magnetic, or thermal transport characteristics.

Research and developmentIntermetallic compoundsElectronic materials
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U4 Cr4 C8

semiconductorU4 Cr4 C8

U4Cr4C8 is a uranium-chromium carbide compound belonging to the family of refractory metal carbides and uranium-based materials. This composition suggests a research or specialized metallurgical compound rather than a widely commercialized alloy, likely explored for high-temperature structural applications or nuclear fuel-related contexts where uranium and carbide phases offer extreme hardness and thermal stability.

Nuclear materials researchRefractory coatingsHigh-temperature structural applications
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U4 Cr6 Si2

semiconductorU4 Cr6 Si2

U4Cr6Si2 is a uranium-chromium-silicon intermetallic compound that belongs to the family of high-entropy or multi-component refractory materials. This composition suggests research-stage material development rather than established commercial use, likely being investigated for applications requiring combined thermal stability, corrosion resistance, and nuclear compatibility.

nuclear reactor componentsrefractory materials researchhigh-temperature structural applications
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U4 Fe4 B16

semiconductorU4 Fe4 B16

U4Fe4B16 is an experimental intermetallic compound combining uranium, iron, and boron, representing research into advanced high-strength materials in the uranium-transition metal-boron family. While not established in mainstream industrial production, materials in this composition space are investigated for applications requiring extreme hardness, thermal stability, or specialized nuclear/aerospace contexts where uranium-based phases offer unique property combinations. The compound's actual engineering relevance depends on its thermal stability, brittleness characteristics, and whether cost and material handling constraints justify use over conventional alternatives.

experimental nuclear materials researchhigh-hardness ceramic phasesrefractory intermetallics
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U4 Ga12 Rh1

semiconductorU4 Ga12 Rh1

U4Ga12Rh1 is an intermetallic compound combining uranium, gallium, and rhodium in a defined stoichiometric ratio, belonging to the class of ternary metallic compounds with potential semiconductor or semi-metallic character. This material is primarily of research interest rather than an established engineering material, studied for its electronic structure and potential applications in specialized environments where uranium-based intermetallics offer unique thermal, magnetic, or electronic properties. The inclusion of rhodium—a noble metal with high corrosion resistance—suggests investigation into enhanced stability or specific band structure engineering compared to binary uranium-gallium phases.

nuclear materials researchexperimental semiconductorshigh-temperature intermetallics
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U4 Ge4 Au4

semiconductorU4 Ge4 Au4

U₄Ge₄Au₄ is an intermetallic compound combining uranium, germanium, and gold in equiatomic proportions, representing an exotic ternary metal system. This material is primarily of research interest in solid-state physics and materials chemistry, where it is studied for its potential electronic and magnetic properties arising from the interaction of uranium f-electrons with the germanium-gold framework. While not established in conventional engineering applications, compounds in this family may eventually find relevance in specialized electronics, thermoelectrics, or quantum materials if phase stability and processing challenges can be resolved.

experimental quantum materials researchsolid-state physics studiesintermetallic compound development
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U4 H8 O16

semiconductorU4 H8 O16

U4H8O16 is a uranium hydride oxide compound in the semiconductor class, representing a mixed-valence uranium oxide hydride material of research interest. This compound belongs to the family of uranium oxides and hydrides, which are studied for nuclear fuel applications, catalysis, and solid-state chemistry. The material's semiconductor behavior and structural properties make it relevant to investigations of uranium compound behavior under varying oxidation and hydration states, though practical industrial deployment remains limited to specialized nuclear research and development contexts.

nuclear fuel researchuranium oxide chemistrysolid-state physics experiments
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U4 In2 Co4

semiconductorU4 In2 Co4

U4In2Co4 is an intermetallic compound combining uranium, indium, and cobalt in a defined stoichiometric ratio, representing a ternary system within the broader class of uranium-based intermetallics. This material falls into the research/specialized category rather than widespread industrial production; it is primarily studied for its electronic and magnetic properties in fundamental materials science and nuclear-related research contexts. The uranium-indium-cobalt system is of interest for understanding phase equilibria, crystal structure effects, and potential applications in advanced nuclear fuel or radiation-resistant materials, though practical engineering applications remain limited compared to commercial uranium alloys.

nuclear materials researchintermetallic phase studiesfundamental condensed matter physics
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U4 In2 Pd4

semiconductorU4 In2 Pd4

U4In2Pd4 is an intermetallic semiconductor compound combining uranium, indium, and palladium in a defined stoichiometric ratio. This is a research-phase material studied primarily for its electronic and thermal properties within the family of ternary uranium intermetallics, which are of interest in nuclear materials science and solid-state physics. The palladium and indium constituents modify the electronic structure relative to binary uranium compounds, making this composition relevant for investigating novel semiconductor behavior, potential thermoelectric applications, or fundamental studies of f-electron systems.

nuclear materials researchintermetallic semiconductorssolid-state physics studies
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U4 Mn4 B16

semiconductorU4 Mn4 B16

U4Mn4B16 is an intermetallic compound combining uranium, manganese, and boron in a specific stoichiometric ratio, representing a research-phase material within the family of uranium-based intermetallics. This compound has been studied primarily in nuclear materials science and condensed-matter physics contexts for its potential magnetic and electronic properties, though it remains largely experimental with limited industrial deployment. The combination of uranium with transition metals and boron is characteristic of materials being investigated for specialized applications where unique electronic or magnetic behavior derived from uranium's f-electron interactions could provide advantages over conventional alternatives.

nuclear materials researchmagnetic materials developmenthigh-performance alloys (experimental)
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U4 Mo4 C8

semiconductorU4 Mo4 C8

U4Mo4C8 is an experimental refractory carbide compound combining uranium, molybdenum, and carbon in a complex ceramic matrix. This material belongs to the family of multi-component carbides studied primarily in nuclear materials science and high-temperature applications research. The mixed-metal carbide composition targets extreme environments where conventional ceramics fail, though this specific composition remains largely in the research phase with limited industrial deployment.

nuclear fuel cladding researchrefractory applicationshigh-temperature ceramic composites
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U4 Ni4 Sn2

semiconductorU4 Ni4 Sn2

U4Ni4Sn2 is an intermetallic semiconductor compound combining uranium, nickel, and tin in a defined stoichiometric ratio. This is a research-phase material studied primarily for its electronic and structural properties within the uranium intermetallic family, rather than a commercial engineering material with established widespread industrial use. The compound's potential lies in specialized applications requiring controlled electronic behavior, magnetic properties, or thermal management in high-performance or extreme-environment systems, though specific deployment remains limited to laboratory and developmental contexts.

nuclear materials researchintermetallic semiconductorselectronic device development
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U4 Ni8

semiconductorU4 Ni8

U4 Ni8 is a uranium-nickel intermetallic compound or alloy that combines uranium's nuclear and chemical properties with nickel's corrosion resistance and structural stability. This material is primarily of research and specialized nuclear/metallurgical interest, where uranium-nickel systems are investigated for potential applications requiring high density, thermal conductivity, or specific nuclear properties. The uranium-nickel family is notable for its potential in advanced fuel matrices, shielding applications, and high-performance metal matrix composites where conventional materials cannot meet extreme performance demands.

nuclear fuel matricesradiation shieldinghigh-density materials research
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U4 O12

semiconductorU4 O12

U4O12 is a uranium oxide compound classified as a semiconductor, belonging to the family of mixed-valence uranium oxides. This material exhibits electrical properties intermediate between conductors and insulators, making it relevant for specialized electronic and nuclear applications where controlled conductivity is required. U4O12 is primarily of research and development interest rather than widespread industrial use, but uranium oxides generally find application in nuclear fuel cycles, radiation shielding, and emerging semiconductor devices where their unique electronic properties offer advantages over conventional alternatives.

nuclear materials researchradiation detectionspecialized semiconductor devices
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U4 Pb4 O16

semiconductorU4 Pb4 O16

U4Pb4O16 is a mixed-valence uranium-lead oxide compound belonging to the family of complex metal oxides with potential semiconductor properties. This is a specialized research material rather than an established commercial compound, studied primarily for its electronic structure and potential applications in nuclear materials science, where uranium oxides play important roles in fuel chemistry and material behavior under extreme conditions. The uranium-lead oxide system represents an area of academic interest for understanding how different metal cations coordinate in oxide frameworks and how such mixed-metal compositions might be engineered for specific electronic or ionic transport properties.

nuclear materials researchoxide semiconductor developmentsolid-state chemistry studies
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U4 Pd12

semiconductorU4 Pd12

U4Pd12 is an intermetallic compound combining uranium and palladium, belonging to the class of metallic compounds with ordered crystal structures. This material represents a research-phase composition studied for its unique electronic and structural properties at the intersection of actinide metallurgy and palladium-based systems. While not yet established in mainstream industrial production, uranium-palladium intermetallics are of interest in nuclear materials science, advanced catalysis research, and fundamental studies of actinide behavior in engineered alloy systems.

nuclear fuel researchactinide metallurgycatalytic materials development
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U4 Rh4 S12

semiconductorU4 Rh4 S12

U₄Rh₄S₁₂ is a ternary chalcogenide compound combining uranium, rhodium, and sulfur in a mixed-valence structure. This is a research-phase material studied primarily for its electronic and magnetic properties within the broader family of uranium-based intermetallic sulfides and Kondo compounds.

Experimental semiconductor physicsStrongly correlated electron systems researchHigh-performance thermoelectric development
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U4 Ru7 As6

semiconductorU4 Ru7 As6

U4Ru7As6 is an intermetallic compound combining uranium, ruthenium, and arsenic in a fixed stoichiometric ratio. This is a research-phase material studied primarily in solid-state physics and materials science for its electronic and magnetic properties rather than as an engineering workhorse; it belongs to the family of complex intermetallics that exhibit interesting quantum phenomena at low temperatures. The compound has no established commercial applications, but materials of this type are investigated for potential use in specialized electronics, superconducting device research, and fundamental studies of strongly correlated electron systems where conventional metals and semiconductors prove inadequate.

experimental semiconductor researchquantum materials studylow-temperature physics
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U4 S3

semiconductorU4 S3

U4 S3 is a semiconductor compound in the uranium-sulfur chemical family, though detailed composition and synthesis methods are not widely documented in standard materials references, suggesting it may be a specialized or research-phase compound. This material belongs to the broader class of chalcogenide semiconductors, which are studied for potential applications in optoelectronics, thermoelectric devices, and nuclear fuel cycles due to uranium's unique electronic properties. Engineers considering this material should verify its availability, stability, and processing characteristics through the supplier or relevant research literature, as it represents a niche composition that may not be commercially standardized.

nuclear materials researchexperimental semiconductorsthermoelectric applications
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U4 S8

semiconductorU4 S8

U4S8 is a uranium sulfide compound belonging to the family of actinide chalcogenides, which are intermetallic semiconductors of scientific and specialized industrial interest. This material has seen limited commercial adoption but appears in nuclear fuel research, advanced materials chemistry, and experimental semiconductor applications where its unique electronic and thermal properties under extreme conditions may be exploited. Engineers considering U4S8 should note that it requires specialized handling due to its uranium content, and its use is restricted to research institutions and licensed nuclear facilities; its primary value lies in fundamental studies of actinide chemistry and solid-state physics rather than mainstream engineering applications.

nuclear materials researchactinide compound studiessemiconductor experimentation
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U4 Se8

semiconductorU4 Se8

U4Se8 is a uranium selenide compound belonging to the family of actinide chalcogenides, which are ceramic semiconductor materials combining uranium with selenium. This material is primarily of research and developmental interest rather than widespread industrial use, explored for potential applications in nuclear materials science, solid-state physics, and advanced semiconductor device development where the unique electronic and thermal properties of uranium compounds may offer advantages in specialized high-performance or radiation-hardened contexts.

nuclear materials researchactinide semiconductorsradiation-hardened electronics
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U4 Si4

semiconductorU4 Si4

U4Si4 is an intermetallic compound in the uranium-silicon system, representing a ceramic-like semiconductor material with potential applications in nuclear and advanced materials research. This compound belongs to the family of uranium silicides, which have been investigated for their thermal properties, radiation stability, and potential use as advanced nuclear fuels or cladding materials. While not widely commercialized, U4Si4 and related uranium silicides are of interest to nuclear engineers and materials scientists studying next-generation fuel concepts and materials capable of withstanding extreme in-pile conditions.

nuclear fuel developmentradiation-resistant materials researchhigh-temperature ceramics
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U4 Si4 Ir4

semiconductorU4 Si4 Ir4

U4Si4Ir4 is an intermetallic compound combining uranium, silicon, and iridium in a 1:1:1 ratio, representing a ternary ceramic-metallic system. This is a research-phase material with potential applications in high-temperature structural systems and nuclear fuel environments, where the combination of refractory metals (U, Ir) and silicon provides enhanced thermal stability and corrosion resistance. The material's properties position it as a candidate for advanced fuel cladding or high-performance aerospace components, though industrial deployment remains limited and engineering feasibility depends on machinability, fabrication costs, and regulatory constraints inherent to uranium-containing alloys.

nuclear fuel systemshigh-temperature claddingrefractory intermetallics
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U4 Si8 W6

semiconductorU4 Si8 W6

U4Si8W6 is a ternary compound semiconductor composed of uranium, silicon, and tungsten elements, representing an experimental or specialized materials research composition rather than a commercial alloy. This compound falls within the broader family of refractory semiconductors and intermetallic compounds, which are of interest for high-temperature electronics, nuclear applications, or advanced material studies where conventional semiconductors reach their performance limits. While not widely deployed in mainstream industry, materials in this class are investigated for extreme-environment applications, nuclear fuel cycles, and specialized electronic devices where thermal stability and radiation resistance are critical advantages over conventional silicon or compound semiconductors.

nuclear fuel researchhigh-temperature electronicsrefractory semiconductors
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U4 Sn2 Pd4

semiconductorU4 Sn2 Pd4

U4Sn2Pd4 is an intermetallic compound combining uranium, tin, and palladium—a research-phase material within the broader family of ternary and higher-order metallic systems. This compound is primarily of interest in materials science research for exploring phase stability, crystal structure, and electronic properties rather than established industrial production. Its potential relevance lies in high-performance applications where uranium-bearing metallics or palladium-strengthened phases might offer unique combinations of density, thermal properties, or electronic behavior, though practical engineering adoption remains limited pending property validation and processing method development.

nuclear materials researchintermetallic compound studyhigh-density alloy development
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U4 Sn2 Rh4

semiconductorU4 Sn2 Rh4

U4Sn2Rh4 is an intermetallic compound combining uranium, tin, and rhodium in a defined stoichiometric ratio, belonging to the class of ternary metallic semiconductors. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in specialized electronic, nuclear, or high-temperature devices where the unique electronic structure of uranium-based intermetallics offers advantages over conventional semiconductors or metals. The incorporation of rhodium provides improved chemical stability and corrosion resistance compared to simpler uranium-tin phases, making it noteworthy for exploratory work in advanced nuclear fuel cycles, quantum materials research, or extreme-environment electronics.

Nuclear materials researchIntermetallic semiconductorsHigh-temperature electronics
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U4 Te4 S4

semiconductorU4 Te4 S4

U4Te4S4 is an experimental mixed-anion semiconductor compound combining uranium, tellurium, and sulfur. This material belongs to the family of polyanionic semiconductors and is primarily of research interest for studying electronic and optical properties in systems with competing chalcogenide bonding. While not yet commercialized, uranium chalcogenides are investigated for potential applications in advanced optoelectronics, nuclear materials science, and next-generation semiconductor devices where tunable bandgaps and mixed-valence chemistry offer advantages over conventional materials.

research semiconductorsnuclear materials sciencephotoelectric devices
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U4 V4 C8

semiconductorU4 V4 C8

U4V4C8 is a refractory carbide ceramic compound containing uranium, vanadium, and carbon in a 4:4:8 stoichiometric ratio. This material belongs to the family of transition metal carbides and is primarily of research interest for high-temperature and nuclear applications where extreme thermal stability and chemical resistance are required. The uranium content distinguishes it as a specialized material for controlled nuclear environments and advanced fuel or structural applications, though industrial adoption remains limited compared to conventional refractory carbides.

nuclear fuel researchhigh-temperature refractory applicationsextreme environment materials
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U4 V4 N8

semiconductorU4 V4 N8

U4V4N8 is an experimental intermetallic or refractory compound combining uranium, vanadium, and nitrogen elements, likely explored within high-temperature materials research or nuclear fuel development contexts. While not a standard commercial alloy, compounds in this compositional family are investigated for potential applications requiring extreme thermal stability, neutron resistance, or specialized nuclear environments where conventional materials reach performance limits.

nuclear fuel systemshigh-temperature refractory applicationsresearch materials
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U4 W4 C8

semiconductorU4 W4 C8

U4W4C8 is a tungsten-uranium carbide composite semiconductor material, likely a research or specialty compound combining refractory metal carbides for high-performance applications. This material family is developed for extreme-environment electronics and structural applications where conventional semiconductors degrade, offering potential advantages in radiation resistance, thermal stability, and hardness compared to silicon-based alternatives.

High-temperature electronicsRadiation-hardened devicesRefractory composite materials
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U5 O10

semiconductorU5 O10

U₅O₁₀ is a mixed-valence uranium oxide compound belonging to the family of intermediate uranium oxides between UO₂ and U₃O₈. This ceramic material is primarily of research and nuclear fuel cycle interest rather than widespread commercial use, studied for its crystallographic properties and potential relevance to uranium fuel oxidation behavior and storage.

nuclear fuel researchuranium oxide chemistryoxidation state studies
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U5 S10

semiconductorU5 S10

U5 S10 is a semiconductor material designation, likely referring to a doped or compound semiconductor in the uranium or rare-earth semiconductor family, though specific composition details are not provided in the available data. Without confirmed elemental makeup or crystal structure, this material's exact properties and performance window remain unclear; it may be a research compound, a vendor-specific designation, or a material from a specialized or legacy database. Engineers considering this material should verify the precise composition, crystal phase, and electrical/thermal properties against their application requirements, as semiconductor performance is highly composition-dependent.

radiation-sensitive detectorsresearch semiconductorsspecialty optoelectronics
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U6 Co12 Ge4 C1

semiconductorU6 Co12 Ge4 C1

U6Co12Ge4C1 is an experimental intermetallic compound combining uranium, cobalt, germanium, and carbon in a fixed stoichiometric ratio. This material belongs to the family of uranium-based intermetallics, which are primarily of research interest for fundamental materials science studies rather than established commercial applications. The compound's potential relevance lies in nuclear materials research, advanced alloy development, and understanding of multi-component intermetallic phase behavior, though it remains largely unexplored industrially and would require extensive characterization before practical engineering consideration.

nuclear materials researchintermetallic phase studieshigh-temperature metallurgy (exploratory)
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U6 Mn2 Sb10

semiconductorU6 Mn2 Sb10

U₆Mn₂Sb₁₀ is an intermetallic semiconductor compound combining uranium, manganese, and antimony in a defined stoichiometric ratio. This material belongs to the class of uranium-based semiconductors and intermetallics, primarily of research and specialized industrial interest rather than commodity use. The compound is notable for potential applications in thermoelectric devices, nuclear materials research, and specialized electronic components where uranium-containing semiconductors offer unique electronic structure and thermal properties distinct from conventional semiconductors.

thermoelectric devicesnuclear materials researchexperimental semiconductors
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U6 Nb2 Sb10

semiconductorU6 Nb2 Sb10

U6Nb2Sb10 is an intermetallic compound belonging to the uranium-niobium-antimony ternary system, representing an experimental or specialized research material rather than a widely commercialized engineering material. This compound lies within the class of refractory intermetallics and is primarily of interest in nuclear materials science, solid-state chemistry, and materials research contexts where uranium-bearing phases are studied for their structural and electronic properties. Limited commercial deployment exists; applications would be restricted to advanced research environments, nuclear fuel studies, or specialized solid-state physics investigations where the unique phase stability and potential electronic or magnetic properties of this ternary system provide value over binary alternatives.

nuclear materials researchintermetallic phase studiessolid-state chemistry
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U6 Si4

semiconductorU6 Si4

U6Si4 is a uranium silicide intermetallic compound belonging to the family of uranium-based ceramics and refractory materials. This material is primarily of research and specialized industrial interest, used in nuclear fuel applications and high-temperature structural applications where uranium's thermal and neutron properties are leveraged. The uranium silicide family is notable for combining high melting points with thermal conductivity suitable for advanced reactor designs, though handling and regulatory considerations limit its adoption compared to conventional uranium oxides or metallic uranium alloys.

nuclear fuel systemshigh-temperature refractory compositesadvanced reactor research
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U6 Ti2 Ge10

semiconductorU6 Ti2 Ge10

U6Ti2Ge10 is an intermetallic compound combining uranium, titanium, and germanium phases, representing a research-stage material in the family of complex multi-component metals and semiconductors. This composition falls within exploratory materials science for potential high-temperature applications or specialized electronic/thermal management systems, though commercial deployment remains limited. The material's notable characteristics would derive from uranium's density and thermal properties combined with titanium's strength and germanium's semiconducting behavior, making it primarily of interest in advanced research contexts rather than established industrial applications.

experimental semiconductor researchhigh-temperature intermetallicsthermal management systems
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U7 Te12

semiconductorU7 Te12

U7 Te12 is an experimental semiconductor compound in the uranium-tellurium chemical system, representing a rare-earth/actinide telluride material class currently of primary interest in materials research rather than established industrial production. This compound family is investigated for potential applications in nuclear-related electronics, radiation detection, and high-temperature semiconductor devices where the uranium-tellurium system's electronic properties offer advantages over conventional semiconductors, though the material remains largely in the research phase with limited commercial deployment due to processing challenges and the regulated nature of uranium-based compounds.

nuclear radiation detectionexperimental high-temperature semiconductorsactinide materials research
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U8 Fe1 S17

semiconductorU8 Fe1 S17

U8Fe1S17 is an experimental uranium-iron sulfide compound belonging to the ternary uranium chalcogenide family, synthesized primarily for fundamental research into actinide materials and their electronic properties. This material is not established in commercial engineering applications; rather, it represents exploratory work in nuclear materials science and solid-state chemistry, where understanding uranium-bearing sulfide phases is relevant to nuclear fuel chemistry, corrosion mechanisms in fuel storage environments, and the thermodynamic behavior of uranium under reducing conditions. Researchers investigate such compounds to map phase diagrams, predict material behavior in nuclear waste repositories, and develop theoretical models of actinide bonding.

nuclear materials researchactinide chemistrysolid-state physics studies
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U8 H24

semiconductorU8 H24

U8 H24 appears to be a designation within the uranium alloy family, likely referring to a uranium-based material in a specific heat-treated or work-hardened condition (H24 typically indicates partial annealing after strain hardening in aluminum-copper systems, though uranium metallurgy uses different conventions). Without confirmed composition data, this material's exact engineering role is unclear; however, uranium alloys have historically been used in dense, high-atomic-weight applications where shielding, inertia, or ballistic performance is critical. Engineers considering this material should verify its specific composition and regulatory classification, as uranium-based materials are subject to strict controls and typically limited to defense, nuclear, or specialized industrial applications where conventional alternatives cannot meet performance requirements.

kinetic energy projectilesradiation shieldingdense-metal counterweights
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UAlO3

semiconductor

UAlO₃ is an experimental uranium-aluminum oxide compound belonging to the mixed-metal oxide ceramic family, primarily investigated in nuclear materials research and advanced ceramics development. This material is studied for potential applications in nuclear fuel forms, radiation-resistant ceramics, and high-temperature refractory systems where uranium-bearing oxide phases must be stabilized with aluminum oxide components. Interest in this compound stems from its potential to improve thermal stability and chemical durability compared to pure uranium oxides, though it remains largely in the research phase without widespread commercial deployment.

nuclear fuel developmentradiation-resistant ceramicsrefractory materials research
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UCdO3

semiconductor

UCdO₃ is an experimental ternary oxide ceramic compound combining uranium, cadmium, and oxygen, likely synthesized for fundamental materials research rather than established commercial production. This compound belongs to the broader family of mixed-metal oxides and actinide ceramics, which are primarily investigated in nuclear fuel development, radiation tolerance studies, and advanced ceramics research. The inclusion of uranium and cadmium makes this material of scientific interest for understanding phase stability and defect chemistry in complex oxide systems, though practical engineering applications remain limited to research and development contexts.

nuclear materials researchactinide ceramicsradiation damage studies
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UCrO3

semiconductor

UCrO3 is a uranium chromium oxide ceramic compound belonging to the perovskite or perovskite-related oxide family. This material exists primarily in research and experimental contexts, where it is investigated for its electronic and magnetic properties as a potential semiconductor or strongly correlated electron system. The compound represents an emerging material of interest in solid-state physics and materials chemistry rather than an established engineering material with widespread industrial deployment.

research semiconductorscorrelated electron systemsoxide electronics
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UGaO3

semiconductor

UGaO₃ is an experimental ternary oxide semiconductor compound combining uranium, gallium, and oxygen. This material belongs to the family of mixed-metal oxides being investigated for advanced electronic and photonic applications, though it remains primarily in research rather than established industrial production. Interest in UGaO₃ centers on its potential for wide-bandgap semiconductor behavior and radiation-resistant properties, making it a candidate for specialized optoelectronic and nuclear-environment applications where conventional semiconductors fail.

experimental semiconductorsradiation-hard electronicshigh-temperature optoelectronics
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UHg3(TeCl3)2

semiconductor

UHg3(TeCl3)2 is a ternary halide semiconductor compound combining uranium, mercury, and tellurium chloride phases. This is a research-phase material within the family of mixed-metal halide semiconductors; industrial applications remain limited and the material is primarily of interest to materials scientists exploring novel semiconductor architectures and electronic structures rather than established engineering practice.

experimental semiconductor researchhalide compound physics studiesradiation detector development (potential)
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UHg4(AsCl3)2

semiconductor

UHg₄(AsCl₃)₂ is a complex mercury-arsenic halide compound that functions as a semiconductor, combining heavy metal cations with arsenic trichloride ligands in an unusual coordination structure. This is a research-phase material with limited industrial deployment; it belongs to the broader family of metal halide semiconductors being explored for specialized optoelectronic and solid-state applications. The material's potential relevance lies in niche research contexts such as radiation detection, nonlinear optical devices, or specialized sensor applications where unconventional band structures and heavy-element compositions offer distinct advantages over conventional semiconductors.

radiation detection (research phase)nonlinear optics (exploratory)specialized sensors
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UHgO3

semiconductor

UHgO3 is an experimental ternary oxide semiconductor containing uranium and mercury, representing a rare composition within the broader class of heavy-metal oxide semiconductors. This compound exists primarily in research contexts exploring novel electronic and photonic properties, as such uranium-mercury systems are not established in commercial production. The material belongs to a family of compounds being investigated for potential applications in radiation detection, high-energy physics instrumentation, and solid-state device research, where the combination of heavy elements and semiconductor behavior offers unique advantages over conventional semiconductors—though practical manufacturing, stability, and regulatory considerations around uranium content currently limit real-world deployment.

research semiconductorsradiation detection systemshigh-energy physics instrumentation
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UKO3

semiconductor

UKO3 is a semiconductor material with an unspecified composition that appears in specialized materials databases, likely representing a research compound or proprietary designation within the oxide or chalcogenide semiconductor family. Without confirmed composition data, it is difficult to establish its precise electronic character; however, materials with similar nomenclature are typically investigated for optoelectronic, thermoelectric, or photovoltaic applications where band gap engineering and carrier mobility are critical. Engineers considering this material should verify its composition, crystal structure, and dopant specifications against their performance requirements, as its suitability depends heavily on these fundamental parameters.

experimental semiconductorsoptoelectronic researchband gap engineering
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ULiO3

semiconductor

ULiO3 is a lithium oxide-based ceramic compound with semiconductor properties, likely representing a research or emerging material in the lithium ceramic family. While not yet widely established in production engineering, materials in this compositional space are of interest for solid-state electrochemistry, particularly as potential solid electrolyte components or lithium-conducting ceramics, where they compete with established alternatives like garnet-type (LLZO) and perovskite-based lithium conductors.

solid-state battery electrolyteslithium-ion conductor researchceramic semiconductor applications
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UMgO3

semiconductor

UMgO3 is an experimental ternary oxide semiconductor compound combining uranium and magnesium in a 1:1:3 stoichiometric ratio. While not widely commercialized, this material belongs to the family of mixed-metal oxides being investigated for potential optoelectronic and nuclear fuel applications, where its unique electronic structure and radiation tolerance characteristics could offer advantages over conventional semiconductor or ceramic alternatives.

nuclear fuel researchexperimental semiconductorsradiation-tolerant materials
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UMnO3

semiconductor

UMnO₃ is a perovskite-structured oxide ceramic compound containing uranium and manganese, currently of primary interest in materials research rather than established industrial production. This compound belongs to the family of complex transition-metal oxides being investigated for potential applications in advanced electronics, magnetism, and nuclear materials science, where the interplay between uranium and manganese oxidation states can produce novel functional properties.

research semiconductorsadvanced ceramicsnuclear materials
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UNaO3

semiconductor

UNaO3 is a uranium-sodium oxide compound, a ternary ceramic oxide that belongs to the family of actinide-based materials. This is a research-phase material studied primarily in nuclear fuel science and materials chemistry contexts rather than established engineering practice. UNaO3 and related uranium oxides are of interest to the nuclear industry for understanding fuel behavior, waste form development, and actinide chemistry, though commercial applications remain limited and the material requires specialized handling due to its radioactive uranium content.

nuclear fuel researchactinide materials studiesceramic waste forms
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UO

semiconductor

Uranium monoxide (UO) is a ceramic semiconductor compound belonging to the uranium oxide family, characterized by a rock-salt crystal structure and high density. It is primarily encountered in nuclear fuel research and materials science studies rather than commercial applications, serving as an intermediate phase in uranium oxidation chemistry and as a model compound for understanding actinide semiconductor behavior. Engineers and researchers consider UO relevant to nuclear materials characterization, fundamental studies of defect chemistry in actinide oxides, and potential high-temperature or radiation-resistant material applications, though its practical deployment is limited by nuclear regulatory constraints and the superior stability of other uranium oxides like UO₂.

nuclear materials researchactinide semiconductor studieshigh-density ceramic compounds
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UO2

semiconductor

Uranium dioxide (UO2) is a ceramic compound and the primary fuel form in nuclear reactors, valued for its high heavy metal density and thermal conductivity in the nuclear power industry. It is used almost exclusively as pelletized fuel in light-water reactors (LWRs) and other reactor types, where its chemical stability and established performance under extreme neutron irradiation make it the industry standard. Engineers select UO2 for nuclear applications because of its proven operational reliability, well-understood behavior during thermal cycling and burnup, and compatibility with standard fuel cladding materials, though specialized knowledge of nuclear materials science is required for design and safety analysis.

nuclear reactor fuellight-water reactor coreshigh-temperature ceramics
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UP2S7

semiconductor

UP2S7 is a semiconductor compound, likely from the III-V or II-VI material family based on naming convention, though its specific composition is not specified in available documentation. This material appears to be either a research-phase compound or a specialized semiconductor with limited industrial standardization. Without confirmed composition data, UP2S7 may be of interest for optoelectronic, photovoltaic, or high-frequency electronic applications where emerging semiconductor chemistries are being evaluated.

optoelectronic devicesphotovoltaic researchhigh-frequency electronics
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UP2S9

semiconductor

UP2S9 is a semiconductor material with unspecified composition, likely a compound or doped semiconductor belonging to either a III-V or II-VI material family based on the alphanumeric designation. Without confirmed composition data, this material appears to be either a research-phase semiconductor or a trade-designated variant; engineers should verify the exact chemical makeup and crystal structure with the supplier before integration into device designs.

semiconductor devicesoptoelectronicsresearch and development
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URbO3

semiconductor

URbO₃ is an experimental oxide semiconductor compound containing uranium and rubidium, belonging to the perovskite or perovskite-related ceramic oxide family. Research on this material is primarily academic in nature, investigating fundamental electronic, optical, or magnetic properties rather than established industrial production. The material is of interest in solid-state physics and materials chemistry for understanding how rare and radioactive elements influence crystal structure and semiconducting behavior, with potential relevance to specialized optoelectronic, nuclear fuel, or catalytic applications if scale-up becomes viable.

experimental semiconductorsoxide ceramics researchsolid-state physics
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UScO3

semiconductor

UScO3 is an experimental uranium-based ternary oxide semiconductor compound under investigation for advanced nuclear and materials research applications. This material belongs to the family of uranium oxycarbides and related actinide compounds, which are studied for their unique electronic and thermal properties in specialized nuclear fuel cycles and high-temperature materials science. Interest in UScO3 stems from potential applications requiring materials with exceptional stability under extreme conditions, though it remains primarily a research-phase material with limited commercial deployment.

nuclear fuel developmentactinide materials researchhigh-temperature ceramics
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USrO3

semiconductor

USrO₃ is a ternary oxide semiconductor compound combining uranium, strontium, and oxygen in a perovskite or related crystal structure. This is a research-phase material studied for its electronic and optical properties rather than a mainstream commercial product. The material family is of interest in nuclear materials science, advanced ceramics research, and potentially in photocatalytic or radiation-detection applications, though industrial adoption remains limited and specific performance advantages over established alternatives are still under investigation.

nuclear materials researchadvanced ceramics developmentradiation detection (experimental)
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