UHgO3
semiconductorUHgO3 is an experimental ternary oxide semiconductor containing uranium and mercury, representing a rare composition within the broader class of heavy-metal oxide semiconductors. This compound exists primarily in research contexts exploring novel electronic and photonic properties, as such uranium-mercury systems are not established in commercial production. The material belongs to a family of compounds being investigated for potential applications in radiation detection, high-energy physics instrumentation, and solid-state device research, where the combination of heavy elements and semiconductor behavior offers unique advantages over conventional semiconductors—though practical manufacturing, stability, and regulatory considerations around uranium content currently limit real-world deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 147.5 | GPa | — | ||
Poisson's Ratio(ν) | 0.3800 | - | — | ||
Shear Modulus(G) | 52.72 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 10.33 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.773 | eV | — | ||
| ↳ | 0.02400 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.4000 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2006 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -2.226 | eV/atom | — | ||
| ↳ | -2.380 | eV/atom | — |