UHgO3
semiconductorUHgO3 is an experimental ternary oxide semiconductor containing uranium and mercury, representing a rare composition within the broader class of heavy-metal oxide semiconductors. This compound exists primarily in research contexts exploring novel electronic and photonic properties, as such uranium-mercury systems are not established in commercial production. The material belongs to a family of compounds being investigated for potential applications in radiation detection, high-energy physics instrumentation, and solid-state device research, where the combination of heavy elements and semiconductor behavior offers unique advantages over conventional semiconductors—though practical manufacturing, stability, and regulatory considerations around uranium content currently limit real-world deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB)2 entries | — | μB | — | — | |
| ↳ | — | µB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |