U4W4C8 is a tungsten-uranium carbide composite semiconductor material, likely a research or specialty compound combining refractory metal carbides for high-performance applications. This material family is developed for extreme-environment electronics and structural applications where conventional semiconductors degrade, offering potential advantages in radiation resistance, thermal stability, and hardness compared to silicon-based alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 203.4 | GPa | — | ||
Shear Modulus(G) | 66.07 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.04800 | eV/atom | — |