UGaO3

semiconductor

· UGaO3

UGaO₃ is an experimental ternary oxide semiconductor compound combining uranium, gallium, and oxygen. This material belongs to the family of mixed-metal oxides being investigated for advanced electronic and photonic applications, though it remains primarily in research rather than established industrial production. Interest in UGaO₃ centers on its potential for wide-bandgap semiconductor behavior and radiation-resistant properties, making it a candidate for specialized optoelectronic and nuclear-environment applications where conventional semiconductors fail.

experimental semiconductorsradiation-hard electronicshigh-temperature optoelectronicsnuclear environment sensingmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.067	eV	—
Magnetic Moment(μB)	0.6000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.750	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

UGaO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control