UGaO3
semiconductor· UGaO3
UGaO₃ is an experimental ternary oxide semiconductor compound combining uranium, gallium, and oxygen. This material belongs to the family of mixed-metal oxides being investigated for advanced electronic and photonic applications, though it remains primarily in research rather than established industrial production. Interest in UGaO₃ centers on its potential for wide-bandgap semiconductor behavior and radiation-resistant properties, making it a candidate for specialized optoelectronic and nuclear-environment applications where conventional semiconductors fail.
experimental semiconductorsradiation-hard electronicshigh-temperature optoelectronicsnuclear environment sensingmaterials research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.