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Semiconductors

23,839 materials

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O12 Cu3 Ru4 Nd1

semiconductorO12 Cu3 Ru4 Nd1

O12Cu3Ru4Nd1 is an experimental intermetallic compound combining copper, ruthenium, and neodymium with oxygen, belonging to the rare-earth transition metal oxide family. This research-stage material is investigated for potential applications in advanced electronics and magnetic systems where the rare-earth neodymium and noble metal ruthenium can provide enhanced electrical, magnetic, or catalytic properties unavailable in conventional semiconductors. Such multicomponent oxides are of interest where corrosion resistance, high-temperature stability, or specialized electronic behavior justify the material complexity and cost.

Research and development semiconductorsRare-earth compound electronicsCatalytic or magnetic applications
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O12 Cu3 Sr1 Sn4

semiconductorO12 Cu3 Sr1 Sn4

O₁₂Cu₃Sr₁Sn₄ is an experimental ternary oxide-based semiconductor compound combining copper, strontium, and tin oxides in a complex crystal structure. This material belongs to the family of mixed-metal oxide semiconductors under active research for emerging electronic and photovoltaic applications, though it remains primarily in the laboratory development stage rather than established industrial production. The combination of earth-abundant elements (copper, tin, strontium) and the oxide chemistry suggests potential interest in cost-effective alternatives to conventional semiconductors, though specific advantages over existing materials and device feasibility require further characterization.

experimental semiconductorsthin-film photovoltaics (research)oxide electronics (development)
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O12 Ga2 Nd6

semiconductorO12 Ga2 Nd6

O12Ga2Nd6 is a rare-earth gallium oxide compound containing neodymium, belonging to the family of mixed-metal oxides with potential semiconductor or photonic properties. This material is primarily of research interest rather than established industrial production, with investigation focused on optical, electronic, or magnetooptical applications leveraging rare-earth dopants in wide-bandgap oxide matrices. Engineers would consider this compound for next-generation optoelectronic devices or specialized photonic systems where neodymium's luminescent properties and gallium oxide's wide-gap semiconducting behavior might be combined.

rare-earth photonics (research)wide-bandgap semiconductorsoptical materials development
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O12 Ga2 Sm6

semiconductorO12 Ga2 Sm6

O12Ga2Sm6 is a rare-earth oxide semiconductor compound combining samarium and gallium oxides, belonging to the family of mixed rare-earth gallium oxides used in specialized optoelectronic and materials research applications. This composition represents an experimental or emerging material system investigated for potential use in high-temperature semiconductors, photonic devices, or magnetic applications where rare-earth doping of wide-bandgap semiconductors offers tunable electronic and optical properties. Engineers considering this material should verify its availability, processing maturity, and whether it addresses specific performance requirements (such as high-temperature stability or optical transparency) that justify development and integration costs over conventional semiconductor platforms.

experimental optoelectronics researchhigh-temperature semiconductorsrare-earth-doped wide-bandgap materials
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O12 Ga2 Tb6

semiconductorO12 Ga2 Tb6

O12Ga2Tb6 is a rare-earth gallium terbium oxide compound belonging to the family of mixed-valence rare-earth semiconductors and magnetic materials. This is a research-phase material studied primarily for its potential in optoelectronic and magnetic device applications, where the terbium content and gallium coordination can provide tunable band structure and strong magnetic coupling effects not easily achieved in conventional semiconductors.

rare-earth semiconductors (research)magnetic device materialsoptoelectronic components (experimental)
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O12 Ho6 W1

semiconductorO12 Ho6 W1

O12 Ho6 W1 is a rare-earth compound containing holmium and tungsten oxides, belonging to the family of mixed-metal oxide ceramics. This appears to be a research or specialty material rather than a widely commercialized product, likely investigated for high-temperature, electronic, or catalytic applications where rare-earth elements provide unique optical, magnetic, or chemical properties.

High-temperature ceramicsRare-earth oxide researchCatalytic materials
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O12 In6 Te1

semiconductorO12 In6 Te1

O₁₂In₆Te₁ is a ternary oxide-telluride semiconductor compound combining indium and tellurium in an oxygen-rich lattice, representing an experimental composition in the indium-tellurium-oxygen material family. This compound falls within the broader class of mixed-valence semiconductors and oxide semiconductors, which are being investigated for optoelectronic and sensing applications where conventional binary semiconductors reach performance limits. While not yet widely commercialized, materials in this family are of research interest for transparent conducting oxides, photodetectors, and thin-film transistor applications where the tunable bandgap and mixed anion chemistry offer potential advantages over standard alternatives like ITO or InGaZnO.

experimental semiconductor researchtransparent conducting oxide candidatesthin-film optoelectronic devices
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O12 K2 Ge4 In2

semiconductorO12 K2 Ge4 In2

O12 K2 Ge4 In2 is a quaternary oxide semiconductor compound containing potassium, germanium, indium, and oxygen, representing an experimental material system rather than an established commercial alloy. This composition belongs to the family of mixed-metal oxides and germanates, which are primarily of research interest for optoelectronic and photonic applications where bandgap engineering and crystal structure control are critical. The inclusion of indium and germanium suggests potential relevance to wide-bandgap or intermediate-bandgap semiconductor design, though this specific stoichiometry appears to be in early-stage investigation rather than established production use.

research semiconductorsphotonic materials developmentbandgap engineering
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O12 K2 Os4

semiconductorO12 K2 Os4

O12 K2 Os4 is an osmium-potassium oxide compound that belongs to the mixed-metal oxide semiconductor family, likely in a research or specialized industrial context. This material is of interest primarily in advanced electronic and catalytic applications where osmium's high density, chemical stability, and unique electronic properties can be leveraged. As an experimental or niche compound, it represents a potential avenue for high-performance semiconductor devices or catalytic systems requiring robust oxidation-resistant materials, though industrial deployment remains limited compared to more conventional semiconductor platforms.

advanced catalysissemiconductor researchhigh-temperature electronics
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O12 K4

semiconductorO12 K4

O12 K4 is a semiconductor compound with an unspecified composition, likely belonging to a binary or ternary oxide or chalcogenide system based on its designation. This material appears to be either a research-phase compound or a specialized semiconductor variant used in niche electronic applications where specific band gap, conductivity, or optical properties are required.

experimental semiconductorsoptoelectronic devicesthin-film electronics
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O12 K4 Ba1 U3

semiconductorO12 K4 Ba1 U3

O12 K4 Ba1 U3 is an experimental mixed-metal oxide compound containing uranium, barium, and potassium in a defined stoichiometry, classified as a semiconductor material. This compound belongs to the family of complex uranium-bearing oxides, primarily of interest in materials research rather than established industrial production. The material's potential applications lie in nuclear science, solid-state physics research, and advanced ceramics development, where uranium-based oxides are studied for their unique electronic and structural properties.

nuclear materials researchsemiconductor physics studiescomplex oxide compounds
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O12 K4 Ca1 U3

semiconductorO12 K4 Ca1 U3

O12 K4 Ca1 U3 is an experimental uranium-bearing oxide compound containing potassium and calcium in a defined stoichiometric ratio, classified as a semiconductor. This material family falls within uranium oxide chemistry research, potentially relevant to nuclear fuel development, nuclear waste form studies, or advanced ceramic science. The incorporation of alkali and alkaline-earth elements suggests investigation into phase stability, thermal conductivity, or corrosion resistance in extreme environments where traditional uranium oxides may be inadequate.

Nuclear fuel researchAdvanced ceramic developmentExperimental semiconductor applications
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O12 K4 Sb4

semiconductorO12 K4 Sb4

O12 K4 Sb4 is a quaternary compound combining oxygen, potassium, and antimony in a fixed stoichiometric ratio, belonging to the oxide-based semiconductor family. This material is primarily of research interest for its potential in photovoltaic, photoelectric, or optoelectronic applications, as antimony-containing oxides exhibit semiconducting behavior suitable for light absorption and charge transport. While not yet widely adopted in mainstream industrial production, compounds in this family are explored as alternatives to conventional semiconductors for specialized applications where their unique band structure or material abundance offers advantages over silicon or III-V semiconductors.

experimental photovoltaic researchwide-bandgap semiconductorsoptoelectronic devices
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O12 Lu6 U1

semiconductorO12 Lu6 U1

O12Lu6U1 is an experimental intermetallic or mixed-oxide compound containing lutetium and uranium with oxygen, representing a rare-earth–actinide composite material family still largely in research phase. Such compounds are investigated for potential applications in nuclear materials science, high-temperature ceramics, and advanced catalysis where the combined properties of rare-earth and actinide elements might provide unique thermal stability, radiation resistance, or chemical reactivity. This material class is not yet established in mainstream engineering practice and would be relevant primarily to research institutions and specialized nuclear/materials laboratories evaluating novel compositions for extreme-environment or nuclear fuel cycle applications.

nuclear materials researchhigh-temperature ceramicsrare-earth actinide compounds
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O12 Mg2 Sr6 Ir2

semiconductorO12 Mg2 Sr6 Ir2

O12 Mg2 Sr6 Ir2 is an experimental mixed-metal oxide semiconductor combining magnesium, strontium, and iridium in a complex layered or perovskite-related structure. This compound belongs to the family of high-entropy oxide semiconductors and is primarily a research material under investigation for advanced electronic and photonic applications. The incorporation of iridium—a rare, noble metal—alongside earth-abundant magnesium and alkaline-earth strontium suggests potential for optoelectronic devices, catalytic systems, or solid-state energy conversion where thermal stability and electronic tunability are priorities, though industrial deployment remains limited.

experimental semiconductor researchoptoelectronic device developmentphotocatalysis and water splitting
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O12 Mg4 Ge4

semiconductorO12 Mg4 Ge4

O12 Mg4 Ge4 is an experimental magnesium germanate ceramic compound belonging to the ternary oxide semiconductor family. While not yet in widespread commercial production, materials in this class are investigated for optoelectronic and photonic applications due to their wide bandgap characteristics and potential for high-temperature stability. Engineers consider magnesium germanates for niche applications requiring radiation hardness, UV emission, or extreme thermal environments where conventional semiconductors degrade.

experimental optoelectronic deviceshigh-temperature ceramics researchwide-bandgap semiconductors
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O12 Mg4 V2 Bi2

semiconductorO12 Mg4 V2 Bi2

O12Mg4V2Bi2 is an experimental quaternary compound semiconductor combining magnesium, vanadium, and bismuth oxides, representing an emerging materials research area in complex oxide semiconductors. This composition falls within the family of multinary oxide semiconductors being investigated for potential optoelectronic and photovoltaic applications where conventional binary or ternary semiconductors show limitations. While not yet established in mainstream industrial production, materials in this chemical family are of interest to researchers exploring novel band structures, defect engineering, and possible applications in next-generation photocatalysis or solid-state electronics.

experimental semiconductorsphotocatalytic researchoptoelectronic devices
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O12 Mg6 Te2

semiconductorO12 Mg6 Te2

O12Mg6Te2 is a ternary oxide-telluride semiconductor compound combining magnesium, tellurium, and oxygen. This is a research-phase material studied for its potential semiconducting and optoelectronic properties, belonging to the broader family of wide-bandgap and mixed-anion semiconductors that show promise for applications requiring thermal stability or UV responsiveness.

experimental optoelectronicswide-bandgap semiconductorsUV photodetectors
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O12 Mn4 Ni2

semiconductorO12 Mn4 Ni2

O12Mn4Ni2 is a manganese-nickel oxide compound classified as a semiconductor, likely representing a ternary or complex oxide phase with potential ferrimagnetic or multiferroic properties. This material family is primarily explored in research contexts for functional ceramic applications rather than as an established commercial product, with compositions emphasizing manganese and nickel oxides that may exhibit interesting magnetic, dielectric, or catalytic behavior depending on crystal structure and dopant interactions.

Experimental magnetic materialsOxide ceramic researchPotential magnetoelectric devices
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O12 Mn6 Te2

semiconductorO12 Mn6 Te2

O12Mn6Te2 is a ternary oxide-based semiconductor compound containing manganese and tellurium. This is a research-phase material studied primarily for its potential in thermoelectric and magnetoelectric applications, where the combination of transition metal (Mn) and chalcogen (Te) elements can produce unusual electronic and magnetic properties. The material represents an exploratory composition in the broader class of complex oxides and mixed-valence semiconductors, with potential relevance to energy conversion and sensing applications if material stability and processability challenges can be overcome.

thermoelectric energy conversion (research)magnetoelectric sensors (experimental)solid-state cooling devices
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O12 Mo4

semiconductorO12 Mo4

O12Mo4 is a molybdenum-oxygen compound classified as a semiconductor, likely representing a molybdenum oxide phase with potential applications in electronic and electrochemical devices. This material belongs to the broader family of transition metal oxides, which are of significant research interest for their tunable electronic properties and catalytic behavior. The material is notable for combining the refractory characteristics of molybdenum with oxide semiconductor properties, making it relevant for applications requiring both thermal stability and controlled electrical conductivity.

catalytic materialssemiconductor deviceselectrochemical systems
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O12 Na12 Sb4

semiconductorO12 Na12 Sb4

O12Na12Sb4 is an inorganic compound belonging to the mixed-metal oxide semiconductor family, combining sodium and antimony oxides in a defined stoichiometric ratio. This material is primarily of research interest in solid-state chemistry and materials science, with potential applications in ionic conductors, photocatalysis, or energy storage systems where mixed-valence metal oxides offer tunable electronic properties. The compound's practical adoption remains limited compared to established semiconductors, making it most relevant for exploratory engineering projects investigating novel oxide phases or materials with unconventional electronic behavior.

experimental semiconductorsoxide photocatalystsionic conductor research
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O12 Na1 Cu3 Ru4

semiconductorO12 Na1 Cu3 Ru4

O12Na1Cu3Ru4 is a mixed-metal oxide compound containing sodium, copper, and ruthenium in a complex crystalline structure; it belongs to the family of ternary/quaternary metal oxides with potential semiconductor or electrochemical properties. This appears to be a research-phase material rather than a widely commercialized engineering compound. The ruthenium–copper oxide framework suggests potential applications in catalysis, electrochemical energy storage, or solid-state electronics, where mixed-valence metal oxides are explored for enhanced electronic or ionic conductivity compared to single-phase alternatives.

electrochemical catalysisbattery/supercapacitor electrodessolid-state ionic conductors
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O12 Na1 Mn7

semiconductorO12 Na1 Mn7

O12Na1Mn7 is a mixed-valent manganese oxide compound with sodium incorporation, belonging to the family of layered or tunnel-structured manganese oxides commonly studied as cathode materials and ion-intercalation hosts. This composition is primarily encountered in materials science research rather than established industrial applications, where it is investigated for electrochemical energy storage, particularly in sodium-ion battery systems and supercapacitors that exploit manganese oxide's redox activity and structural flexibility. The sodium content and manganese-rich stoichiometry make this compound notable for its potential in post-lithium battery chemistries and as a low-cost alternative to cobalt-based cathodes, though optimization of crystal structure, cycling stability, and rate performance remains an active research focus.

sodium-ion battery cathodesenergy storage researchsupercapacitor electrodes
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O12 Na2 Ba6 Ir2

semiconductorO12 Na2 Ba6 Ir2

O₁₂Na₂Ba₆Ir₂ is a mixed-metal oxide semiconductor containing barium, sodium, and iridium—a complex inorganic compound that lies at the intersection of materials chemistry and solid-state physics research. This is primarily an experimental material investigated in academic and materials science contexts rather than an established industrial product; compounds of this type are studied for potential applications in advanced electronics, catalysis, or photonic devices where the unique electronic structure arising from multiple metal centers may offer novel functional behavior.

experimental semiconductor researchmixed-metal oxide compoundscatalytic material development
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O12 Na2 Ca6 Ir2

semiconductorO12 Na2 Ca6 Ir2

O12Na2Ca6Ir2 is an experimental mixed-metal oxide semiconductor containing iridium, calcium, and sodium in a crystalline lattice structure. This compound belongs to the family of complex metal oxides and is primarily of research interest rather than established industrial use, with potential applications in catalysis, electrochemistry, or photocatalytic systems where iridium's catalytic properties and mixed-valence characteristics are leveraged. Engineers and researchers would consider this material in early-stage development contexts where oxide semiconductors with rare-earth or transition-metal doping are being explored for energy conversion, environmental remediation, or advanced catalytic processes.

experimental catalysisphotoelectrochemistry researchoxide semiconductor development
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O12 Na2 Ru2 Ba6

semiconductorO12 Na2 Ru2 Ba6

Ba6Ru2Na2O12 is a mixed-metal oxide compound containing barium, ruthenium, and sodium in a defined stoichiometric ratio, classified as a semiconductor material. This is a research-phase compound rather than an established industrial material; it belongs to the family of complex metal oxides that show potential for electrochemical and photocatalytic applications due to the presence of transition metal ruthenium. The combination of alkaline earth (barium), alkali (sodium), and noble metal (ruthenium) elements suggests interest in catalysis, energy conversion, or solid-state electronic applications, though specific industrial adoption remains limited.

photocatalytic materials (research)electrochemical devices (exploratory)complex oxide semiconductors
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O12 Na2 Si4 Fe2

semiconductorO12 Na2 Si4 Fe2

O12Na2Si4Fe2 is an iron-sodium silicate compound belonging to the oxide ceramic family, likely a synthetic or naturally-derived silicate phase with potential semiconductor or photocatalytic properties. This composition represents a research-phase material rather than a widely commercialized engineering grade; it combines iron's redox activity with silicate framework chemistry, making it a candidate for applications requiring ion conductivity, photocatalysis, or selective adsorption. Engineers would evaluate this material primarily in advanced functional ceramics contexts where the coupled ionic and electronic properties of the iron-silicate network provide advantages over conventional oxides or zeolites.

photocatalytic applicationsion-conducting ceramicsresearch materials
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O12 Na2 Si4 Mn2

semiconductorO12 Na2 Si4 Mn2

O12Na2Si4Mn2 is a manganese-silicate compound with sodium incorporation, belonging to the class of mixed-metal oxide semiconductors. This material is primarily of research interest for its potential in photocatalysis, ion-exchange applications, and functional ceramic systems where the combination of manganese redox chemistry and silicate framework structure can be leveraged. The sodium-doped silicate matrix with manganese is notable for potential applications in environmental remediation and energy conversion, though it remains largely in the developmental stage compared to more established semiconductor oxides.

photocatalytic water treatmention-exchange membranesfunctional ceramics research
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O12 Na2 Sr6 Ir2

semiconductorO12 Na2 Sr6 Ir2

O12Na2Sr6Ir2 is a complex mixed-metal oxide semiconductor containing sodium, strontium, and iridium in a structured lattice. This is a research-phase compound rather than a commercial material; it belongs to the family of perovskite-related oxides and high-entropy ceramic semiconductors, which are of interest for their potential electrochemical and photocatalytic properties. The combination of rare-earth and alkali-metal doping in an iridium oxide framework positions it as a candidate for energy conversion applications, though engineering adoption remains limited to specialized research and development contexts.

photocatalysis researchelectrochemical devicessolid-state oxygen transport
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O12 Na2 Sr6 Sb2

semiconductorO12 Na2 Sr6 Sb2

O12Na2Sr6Sb2 is an inorganic semiconductor compound combining sodium, strontium, and antimony oxides in a mixed-metal oxide framework. This material belongs to the family of complex metal antimonates and represents an emerging research compound of interest for solid-state electronics and photonic applications. As a relatively uncommon ternary/quaternary oxide system, it is primarily studied in academic and advanced materials research contexts for potential use in semiconducting devices, photocatalysis, or functional ceramics where the specific electronic structure of mixed alkali-earth-pnicton oxide phases offers advantages over conventional binary oxides.

research semiconductorsphotocatalytic materialssolid-state electronics
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O12 Na2 Sr6 Ta2

semiconductorO12 Na2 Sr6 Ta2

O12Na2Sr6Ta2 is an oxide semiconductor compound combining sodium, strontium, and tantalum elements in a complex crystalline structure. This is a research-phase material within the broad family of mixed-metal oxides and perovskite-related ceramics, developed for potential applications in advanced electronic and photonic devices where conventional semiconductors are less suitable. The combination of alkaline earth metal (strontium) with transition metal (tantalum) oxides suggests potential for ionic conductivity, ferroelectric behavior, or wide-bandgap semiconductor properties that may be exploited in specialized energy conversion, sensing, or optical applications.

experimental semiconductorssolid-state electrolytesphotocatalytic materials
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O12 Na4 Nb4

semiconductorO12 Na4 Nb4

O12Na4Nb4 is a mixed-metal oxide semiconductor compound containing sodium and niobium, belonging to the family of complex oxide materials. This appears to be a research or specialized compound rather than a widely commercialized material; it likely exhibits ionic and electronic properties relevant to electrochemical or photocatalytic applications. Materials in this compositional family are investigated for energy storage, catalysis, and advanced sensing due to their tunable electronic structure and oxygen-ion mobility.

photocatalytic materialssolid-state electrolytesion-transport layers
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O12 Na4 Sb4

semiconductorO12 Na4 Sb4

O₁₂Na₄Sb₄ is an inorganic compound combining sodium, antimony, and oxygen—a mixed-metal oxide that falls within the broader class of oxyantimonates. This is a research or specialty compound rather than a widely commercialized engineering material; it is primarily of interest in solid-state chemistry and materials discovery contexts where sodium-antimony oxide phases are explored for potential electrochemical or photonic applications.

solid-state research materialsexperimental electrochemistryion-conductor development
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O12 Na4 Ta4

semiconductorO12 Na4 Ta4

O12Na4Ta4 is an inorganic sodium tantalate compound belonging to the mixed-metal oxide semiconductor family, characterized by a sodium-tantalum-oxygen stoichiometry. This material is primarily of research and developmental interest for photocatalytic and electrochemical applications, particularly in water splitting and environmental remediation, where tantalate-based semiconductors are valued for their chemical stability and band gap characteristics. The sodium component influences crystal structure and charge transport properties, making this compound potentially relevant for emerging energy conversion technologies, though industrial adoption remains limited compared to established tantalum oxide or perovskite alternatives.

photocatalytic water splittingenvironmental remediationelectrochemical devices
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O12 Nb4 Sn2

semiconductorO12 Nb4 Sn2

O12Nb4Sn2 is an intermetallic semiconductor compound combining niobium and tin oxides, likely part of the broader family of mixed-metal oxide semiconductors used in advanced electronic and photonic applications. This appears to be a research or specialized material rather than a commodity compound, with potential applications in high-temperature electronics, sensor devices, or photocatalytic systems where the unique band structure of niobium-tin oxide combinations offers advantages over single-component alternatives. The material's semiconductor classification suggests it could serve in applications requiring tunable electronic properties or enhanced performance in extreme thermal or chemical environments.

High-temperature semiconductor devicesPhotocatalytic materialsAdvanced electronic sensors
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O12 Ni2 Sr6 Ir2

semiconductorO12 Ni2 Sr6 Ir2

O12 Ni2 Sr6 Ir2 is an experimental mixed-metal oxide compound combining nickel, strontium, and iridium in an oxygen-rich matrix. This material belongs to the family of complex oxides and perovskite-related structures, which are primarily investigated for electrochemical and catalytic applications rather than structural engineering use. Research into such compositions typically targets energy conversion devices where the combination of noble metal (iridium) catalytic activity with perovskite-like stability offers potential advantages in oxygen reduction, water splitting, or solid-oxide fuel cell cathodes.

fuel cell cathodeselectrochemical catalysisoxygen reduction catalysts
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O12 Ni2 Sr6 Pt2

semiconductorO12 Ni2 Sr6 Pt2

O12 Ni2 Sr6 Pt2 is a mixed-metal oxide semiconductor compound containing nickel, strontium, and platinum in a complex perovskite-related crystal structure. This is an experimental/research material rather than a production commodity, typically studied for its potential in solid-state electrochemistry and high-temperature electronic applications. The platinum and strontium dopants in a nickel oxide framework are designed to enhance ionic conductivity and catalytic properties, making this material family of interest for next-generation fuel cells, oxygen sensors, and catalytic converters where thermal stability and mixed ionic-electronic conductivity are required.

solid oxide fuel cells (SOFC)oxygen sensorscatalytic converters
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O12 Rb2 Os4

semiconductorO12 Rb2 Os4

O12 Rb2 Os4 is a mixed-metal oxide compound containing rubidium and osmium in a stoichiometric ratio, belonging to the family of complex metal oxides and potentially inorganic semiconductors. This is a research-phase material with limited commercial deployment; compounds in this family are of interest for their electronic and catalytic properties, though practical applications remain largely exploratory. Engineers evaluating this material should recognize it as a candidate for specialized electrochemistry, advanced ceramics research, or functional oxide device applications rather than a production-ready engineering solution.

experimental semiconductor researchcatalytic materials developmenthigh-entropy oxide systems
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O12 Rb2 Te4

semiconductorO12 Rb2 Te4

O12 Rb2 Te4 is a mixed-metal oxide semiconductor compound containing rubidium and tellurium, belonging to the family of complex metal tellurates. This is a research-phase material with limited industrial precedent; its potential relevance lies in specialty optoelectronic and photovoltaic applications where wide bandgap semiconductors or exotic carrier properties may be advantageous, though engineering adoption remains experimental pending characterization of thermal stability, processability, and cost-effectiveness.

experimental optoelectronicsresearch photovoltaicswide-bandgap semiconductor development
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O12 Rb8

semiconductorO12 Rb8

O12Rb8 is an experimental oxide compound containing rubidium, representing a mixed-metal oxide in the broader class of functional ceramics and inorganic semiconductors. This material is primarily of research interest for its potential electronic and ionic properties rather than established industrial production; it belongs to the family of complex oxides that can exhibit semiconducting, ionic conductivity, or photocatalytic behavior depending on synthesis and doping conditions. Engineers and materials scientists investigating advanced ceramics for next-generation energy storage, catalysis, or solid-state ionics applications would evaluate this compound as a candidate material, though it remains in the exploratory phase without widespread commercial deployment.

research semiconductorssolid-state ionicsceramic catalysts
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O12 S2 I4

semiconductorO12 S2 I4

O12 S2 I4 is a semiconductor compound composed of oxygen, sulfur, and iodine in a 12:2:4 stoichiometric ratio. This is a mixed-halide, mixed-chalcogen semiconductor that belongs to the family of complex ternary semiconductors, likely of research or emerging commercial interest rather than an established industrial standard. Such compounds are investigated for optoelectronic applications where tunable bandgaps, light absorption, or ion transport properties are desired—particularly in thin-film photovoltaics, scintillators, or solid-state ionic devices where conventional binary semiconductors are insufficient.

photovoltaic researchthin-film optoelectronicsscintillator materials
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O12 Sb8

semiconductorO12 Sb8

O12Sb8 is an experimental antimony oxide semiconductor compound, likely a mixed-valence or defect-structured material belonging to the broader family of metal oxide semiconductors. This composition suggests a research-phase material under investigation for its electronic and potentially photocatalytic properties, as antimony oxides are of interest in semiconductor physics for their tunable band gap and defect chemistry.

experimental optoelectronicsphotocatalytic applicationssemiconductor research
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O12 Sc2 Ni2 Sr6

semiconductorO12 Sc2 Ni2 Sr6

O12Sc2Ni2Sr6 is an experimental oxide semiconductor compound containing scandium, nickel, and strontium elements, likely synthesized for research into novel functional ceramics or perovskite-related structures. This material belongs to the family of complex mixed-metal oxides that are actively investigated for potential applications in electronic devices, energy conversion, or catalysis, though it remains primarily a laboratory compound without established commercial production. Engineers evaluating this material should treat it as a research-stage composition requiring further characterization and optimization before industrial adoption.

experimental semiconductorsoxide electronics researchsolid-state catalysis
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O12 Si4 Ca2 Co2

semiconductorO12 Si4 Ca2 Co2

O12Si4Ca2Co2 is an experimental ceramic compound combining silicate, calcium, and cobalt phases, likely being investigated as a functional ceramic material with potential electromagnetic or catalytic properties due to its cobalt content. Research-stage compounds of this type are typically explored for advanced applications where combined ionic, covalent, and transition-metal bonding can enable unique thermal, electrical, or chemical performance characteristics. Without established industrial production or standardized properties, this material remains primarily of academic interest pending demonstration of practical advantages over conventional silicates, calcium compounds, or cobalt-doped ceramics.

materials researchexperimental ceramicscobalt-containing composites
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O12 Si4 Cr2

semiconductorO12 Si4 Cr2

O12 Si4 Cr2 is a chromium-silicon oxide ceramic compound belonging to the semiconductor materials class, likely representing a complex oxide phase with potential applications in electronic or structural applications where combined oxidation resistance and electrical properties are desired. This material composition suggests a research or specialized ceramic with chromium and silicon oxide components, which may be explored for high-temperature semiconductor devices, catalytic supports, or advanced ceramic coatings where the synergistic properties of chromium and silicon oxides could provide benefits over single-phase alternatives. The specific stoichiometry indicates this is either an experimental compound under investigation or a specialized phase engineered for niche applications requiring thermal stability and selective electronic behavior.

high-temperature semiconductorsceramic coatings and compositescatalytic support materials
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O12 Si4 Ti2

semiconductorO12 Si4 Ti2

O12Si4Ti2 is a titanium-silicon oxide ceramic compound, likely belonging to the family of advanced oxide ceramics or composite materials used in high-temperature structural and electronic applications. This material combines titanium and silicon oxide phases, which may offer a balance of thermal stability, hardness, and oxidation resistance. While this specific stoichiometry appears to be a specialized or research-phase composition rather than a widely commercialized product, materials in this oxide family are pursued for demanding aerospace, electronics, and refractory applications where traditional single-phase ceramics reach performance limits.

high-temperature structural compositesaerospace thermal componentssemiconductor device packaging
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O12 Si4 V2

semiconductorO12 Si4 V2

O₁₂Si₄V₂ is an experimental ceramic compound combining silicon oxide and vanadium phases, representing a research-stage material in the oxide-ceramic semiconductor family. This composition falls within advanced ceramics development, where silicon-vanadium oxide systems are being investigated for their potential in high-temperature structural applications and electronic device contexts. The material's relevance would depend on project requirements for thermal stability, hardness, or semiconductor properties in specialized environments where conventional oxides or carbides show limitations.

advanced ceramics researchhigh-temperature structural applicationsexperimental semiconductor devices
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O12 Sr4 Zr4

semiconductorO12 Sr4 Zr4

O12Sr4Zr4 is a mixed-metal oxide ceramic compound combining strontium and zirconium elements, likely investigated as a perovskite or perovskite-derived phase for electrochemical or structural applications. This composition sits within the family of Sr-Zr-O ceramics that are of research interest for their potential ionic conductivity, thermal stability, and chemical compatibility in energy conversion systems.

solid oxide fuel cells (SOFC)electrolyte materialshigh-temperature ceramics
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O12 Sr6 Cd2 Ir2

semiconductorO12 Sr6 Cd2 Ir2

O₁₂Sr₆Cd₂Ir₂ is a mixed-metal oxide compound containing strontium, cadmium, and iridium—a rare composition that bridges ceramic and semiconductor chemistry. This is a research-phase material whose properties and practical applications remain largely exploratory; it belongs to the family of complex perovskite-related oxides being investigated for novel electronic, catalytic, or photonic behavior unavailable in conventional semiconductors.

experimental semiconductor researchcatalytic materials developmenthigh-entropy oxide systems
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O12 Sr6 Cd2 Pt2

semiconductorO12 Sr6 Cd2 Pt2

O12Sr6Cd2Pt2 is an experimental mixed-metal oxide compound containing strontium, cadmium, and platinum in a structured lattice, belonging to the broader family of complex perovskite-related semiconductors. This material is primarily a research-phase compound investigated for its potential electronic and photocatalytic properties rather than established industrial production. The platinum-doped strontium cadmium oxide system is of interest in materials science for understanding charge transport mechanisms and catalytic activity in semiconductor applications, though it remains largely in laboratory development without widespread commercial deployment.

photocatalysis researchsemiconductor device developmentthin-film electronics
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O12 Sr6 Rh2 Dy2

semiconductorO12 Sr6 Rh2 Dy2

O12Sr6Rh2Dy2 is an experimental oxide compound containing strontium, rhodium, and dysprosium in a mixed-valent ceramic framework, likely a perovskite-related or pyrochlore-type structure. This material remains primarily in research phase, explored for potential applications in solid-state ionics, catalysis, or magnetic applications due to the combination of rare-earth (dysprosium) and transition-metal (rhodium) dopants that can induce functional electronic or ionic properties. Engineers considering this compound would be working on early-stage device development or fundamental materials discovery rather than established industrial production.

solid-state energy storage (research phase)catalytic applications (experimental)rare-earth functional ceramics
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O12 Sr6 Rh2 Er2

semiconductorO12 Sr6 Rh2 Er2

O12Sr6Rh2Er2 is an experimental mixed-metal oxide compound combining strontium, rhodium, and erbium in a structured lattice, belonging to the family of complex metal oxides and potential semiconducting ceramics. This composition is primarily of research interest in solid-state physics and materials development rather than established industrial production, with potential applications in advanced electronic devices, photocatalysis, or high-temperature functional materials. The incorporation of rare-earth erbium and noble-metal rhodium suggests investigation of optical, magnetic, or catalytic properties for next-generation energy conversion or sensing technologies.

Research & development (materials science)Photocatalytic applicationsSolid-state electronics
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O12 Sr6 Rh2 Ho2

semiconductorO12 Sr6 Rh2 Ho2

O12Sr6Rh2Ho2 is a complex mixed-metal oxide compound combining strontium, rhodium, and holmium in a structured lattice. This is a research-phase material rather than an established commercial product, belonging to the family of rare-earth transition-metal oxides that are investigated for their potential electronic, magnetic, or catalytic properties. Such materials are explored primarily in academic and specialized industrial settings for advanced applications where conventional semiconductors or ceramics are insufficient.

experimental semiconductorscatalytic materials researchrare-earth device engineering
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O12 Sr6 Rh2 Sm2

semiconductorO12 Sr6 Rh2 Sm2

O12Sr6Rh2Sm2 is a complex mixed-metal oxide compound combining strontium, rhodium, and samarium in a structured lattice. This is a research-phase material rather than an established commercial compound; it belongs to the family of perovskite-related oxides and rare-earth-containing ceramics being investigated for electrochemical and solid-state applications.

solid oxide fuel cellselectrocatalysis researchhigh-temperature ceramics
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O12 Sr6 Rh2 Tb2

semiconductorO12 Sr6 Rh2 Tb2

O12Sr6Rh2Tb2 is a complex mixed-metal oxide compound containing strontium, rhodium, and terbium—a rare-earth-bearing ceramic material that remains primarily in research and development rather than established industrial production. This composition belongs to the family of perovskite-related oxides and rare-earth rhodates, which are of interest for their potential electrical, magnetic, and catalytic properties at elevated temperatures. The inclusion of terbium (a lanthanide) suggests potential applications in materials where magnetic behavior, oxygen transport, or high-temperature stability are critical, though this specific stoichiometry is not yet widely deployed in volume manufacturing.

experimental ceramicssolid-state electrochemistryrare-earth functional materials
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O12 Sr6 Rh2 Yb2

semiconductorO12 Sr6 Rh2 Yb2

O12Sr6Rh2Yb2 is a complex oxide semiconductor compound containing strontium, rhodium, and ytterbium in a structured lattice. This is a research-phase material from the family of transition metal oxides with rare-earth doping, studied primarily for its potential electronic and magnetic properties rather than established commercial use. The combination of rhodium and ytterbium suggests investigation into mixed-valence states or enhanced charge transport, making it of interest in emerging fields such as next-generation semiconductor devices or materials with tunable electronic behavior.

experimental semiconductorsresearch oxide compoundsrare-earth doped electronics
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O12 Sr6 Y2 Rh2

semiconductorO12 Sr6 Y2 Rh2

O₁₂Sr₆Y₂Rh₂ is an experimental mixed-metal oxide compound containing strontium, yttrium, and rhodium in a perovskite-related crystal structure. This material belongs to the family of complex oxides under investigation for high-temperature electrochemical and catalytic applications, where the combination of rare-earth (Y) and noble-metal (Rh) constituents aims to enhance ionic conductivity and chemical stability. While not yet commercialized, compounds in this structural family show promise for advanced energy conversion systems where conventional materials face thermal or chemical degradation limits.

solid oxide fuel cells (research)electrocatalysishigh-temperature oxygen conductors
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O12 Sr8 Ir2

semiconductorO12 Sr8 Ir2

O12Sr8Ir2 is an iridate-based mixed-metal oxide semiconductor, a research compound combining strontium and iridium in an oxygen-rich perovskite-like structure. This material family is primarily investigated for electrochemical applications and advanced functional oxides, particularly where strong electron correlation effects and high catalytic activity are desired. While still largely in the research phase rather than established industrial production, iridium-based oxides are notable for their chemical stability and potential advantages in high-oxidation-state catalysis compared to conventional transition metal oxides.

electrochemical catalystsoxygen evolution/reduction reactionswater splitting applications
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O12 Sr8 Pt2

semiconductorO12 Sr8 Pt2

O12Sr8Pt2 is an oxide-based ceramic compound containing strontium and platinum, likely belonging to the family of perovskite or mixed-metal oxide materials. This appears to be a research or specialty compound rather than a widely commercialized material; it represents an experimental composition that combines noble metal (platinum) with alkaline-earth oxide (strontium oxide) for potential electrochemical or high-temperature applications. The inclusion of platinum suggests investigation for catalytic, electrochemical, or thermal stability properties in demanding environments.

solid oxide fuel cellselectrocatalysis researchhigh-temperature ceramics
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