O12Mg4V2Bi2 is an experimental quaternary compound semiconductor combining magnesium, vanadium, and bismuth oxides, representing an emerging materials research area in complex oxide semiconductors. This composition falls within the family of multinary oxide semiconductors being investigated for potential optoelectronic and photovoltaic applications where conventional binary or ternary semiconductors show limitations. While not yet established in mainstream industrial production, materials in this chemical family are of interest to researchers exploring novel band structures, defect engineering, and possible applications in next-generation photocatalysis or solid-state electronics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.116 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.484 | eV/atom | — |