O12Nb4Sn2 is an intermetallic semiconductor compound combining niobium and tin oxides, likely part of the broader family of mixed-metal oxide semiconductors used in advanced electronic and photonic applications. This appears to be a research or specialized material rather than a commodity compound, with potential applications in high-temperature electronics, sensor devices, or photocatalytic systems where the unique band structure of niobium-tin oxide combinations offers advantages over single-component alternatives. The material's semiconductor classification suggests it could serve in applications requiring tunable electronic properties or enhanced performance in extreme thermal or chemical environments.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 107.2 | GPa | — | ||
Shear Modulus(G) | 55.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.844 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.480 | eV/atom | — |