O12 In6 Te1

semiconductor

· O12 In6 Te1

O₁₂In₆Te₁ is a ternary oxide-telluride semiconductor compound combining indium and tellurium in an oxygen-rich lattice, representing an experimental composition in the indium-tellurium-oxygen material family. This compound falls within the broader class of mixed-valence semiconductors and oxide semiconductors, which are being investigated for optoelectronic and sensing applications where conventional binary semiconductors reach performance limits. While not yet widely commercialized, materials in this family are of research interest for transparent conducting oxides, photodetectors, and thin-film transistor applications where the tunable bandgap and mixed anion chemistry offer potential advantages over standard alternatives like ITO or InGaZnO.

experimental semiconductor researchtransparent conducting oxide candidatesthin-film optoelectronic devicesphotodetector developmenthigh-bandgap semiconductor explorationmaterials discovery for next-generation electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.247	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.605	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O12 In6 Te1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control