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Semiconductors

23,839 materials

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B1 C2 Sc2

semiconductorB1 C2 Sc2

B₁C₂Sc₂ is an experimental ternary ceramic compound combining boron carbide with scandium, belonging to the broader family of advanced ceramics and boron-based materials. This material is primarily a research compound with potential applications in high-performance structural ceramics, as scandium incorporation into boron carbide systems can modify mechanical properties and thermal stability for extreme-environment applications. The material represents ongoing work in ceramic science to develop lighter, harder, and thermally stable compounds for aerospace and defense applications where conventional ceramics reach performance limits.

experimental advanced ceramicshigh-temperature structural applicationsaerospace research
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B1 C5

semiconductorB1 C5

B1C5 is a boron-carbon ceramic compound belonging to the family of boron carbides, which are ultra-hard refractory materials used in extreme wear and abrasive applications. This material is primarily investigated for its potential in abrasive grinding media, armor systems, and high-temperature applications where conventional carbides are insufficient. B1C5 represents a specific stoichiometry within the boron carbide phase space and is notable for combining hardness with relative thermal stability, making it a candidate material for advanced industrial processes and protective applications where cost-performance balance is critical.

abrasive grinding mediabody armor and ballistic protectionrefractory high-temperature applications
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B1 C7

semiconductorB1 C7

B1C7 is an experimental boron carbide ceramic compound with a non-stoichiometric composition, belonging to the family of hard ceramic materials. While not widely commercialized, boron carbide compounds are investigated for applications requiring extreme hardness and thermal stability, offering potential advantages over conventional abrasives and wear-resistant coatings in demanding environments.

abrasive applicationswear-resistant coatingshigh-temperature ceramics
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B1 Ge2 Ni6

semiconductorB1 Ge2 Ni6

B1 Ge2 Ni6 is an intermetallic compound combining germanium and nickel in a boron-stabilized crystal structure, belonging to the semiconductor/intermetallic family. This is primarily a research material investigated for its potential in thermoelectric applications and high-temperature electronics, where the combination of rigid crystal structure and semiconducting behavior offers promise for energy conversion and thermal management in extreme environments. The material represents an experimental platform for studying intermetallic semiconductor properties rather than an established commercial product, with applications most relevant to advanced materials development for aerospace, power generation, and specialized semiconductor research.

thermoelectric deviceshigh-temperature semiconductorsmaterials research
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B1 Hf1

semiconductorB1 Hf1

B1 Hf1 is a hafnium-based binary compound semiconductor, likely representing a hafnium boride or related intermetallic phase with potential for high-temperature electronics and materials research. This material belongs to the family of refractory compounds that retain semiconductor properties at elevated temperatures, making it of interest for extreme environment applications where traditional semiconductors degrade. Its notable stiffness and hardness characteristics position it as a candidate for specialized high-temperature device structures and thermoelectric applications, though it remains primarily in the research and development phase rather than established commercial production.

high-temperature electronicsrefractory semiconductorsthermoelectric devices
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B1 Ir6 Zr2

semiconductorB1 Ir6 Zr2

B1 Ir6 Zr2 is an intermetallic compound combining iridium and zirconium in a specific stoichiometric ratio, belonging to the family of refractory intermetallics. This material is primarily of research interest for high-temperature structural applications where exceptional thermal stability and oxidation resistance are required, though it remains largely experimental rather than widely deployed in production. Engineers would consider this compound for extreme-environment aerospace or power-generation systems where conventional superalloys reach their limits, though processing complexity and cost typically restrict its use to specialized research programs.

high-temperature structural applicationsaerospace researchrefractory intermetallics
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B1 O3 Ag3

semiconductorB1 O3 Ag3

B₁O₃Ag₃ is a mixed-metal oxide semiconductor compound containing silver and boron oxide components. This is a research-phase material within the family of silver-containing oxides and boron compounds; such materials are being explored for optoelectronic and photocatalytic applications where the combination of silver's electrical and optical properties with oxide host matrices offers potential advantages in light absorption and charge transport. Industrial adoption remains limited, but the material family shows promise in applications requiring semiconducting behavior with silver's antimicrobial or catalytic contributions.

photocatalysis researchoptoelectronic devicesexperimental semiconductors
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B1 Os1

semiconductorB1 Os1

B1Os1 is an experimental boron-osmium compound, representing a rare intermetallic or ceramic phase that combines a refractory metal (osmium) with boron. This material family is primarily explored in research settings for extreme-temperature and wear-resistant applications, as osmium borides can exhibit high hardness and thermal stability. Industrial adoption remains limited due to cost, brittleness concerns, and processing challenges typical of refractory boron compounds; it is not a conventional engineering material in widespread use.

high-temperature structural applicationswear-resistant coatings (research phase)refractory composite development
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B1 Os1 O3

semiconductorB1 Os1 O3

B₁Os₁O₃ is an experimental mixed-metal oxide compound containing boron and osmium in a ternary oxide system. This material belongs to the family of complex metal oxides being explored for semiconductor and electronic applications, though it remains primarily a research composition rather than a commercially established material. The combination of boron and osmium oxides suggests potential interest in high-temperature semiconductors, catalysis, or advanced ceramic applications where transition-metal oxides with unusual stoichiometries may offer unique electronic or structural properties.

Research semiconductorsHigh-temperature ceramicsCatalyst materials
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B1 P1

semiconductorB1 P1

B1 P1 is a semiconductor material whose specific composition requires clarification, but it likely belongs to a boron-phosphide or similar III-V compound semiconductor family. This class of materials is valued in high-temperature electronics, optoelectronics, and power devices where wide bandgap semiconductors offer superior thermal stability and breakdown voltage compared to conventional silicon. The notable stiffness and elastic properties suggest potential applications in ruggedized or harsh-environment semiconductor devices.

high-temperature semiconductor devicespower electronicswide-bandgap optoelectronics
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B1 P1 S4

semiconductorB1 P1 S4

B1 P1 S4 is a semiconductor compound from the boron–phosphorus–sulfur chemical family, likely a ternary or quaternary phase used in materials research rather than established commercial production. While specific compositional details are limited, materials in this family are investigated for optoelectronic and photovoltaic applications where tunable band gaps and layered structures offer potential advantages over conventional binary semiconductors. Researchers explore such compounds for niche applications requiring specialized electronic or optical properties not readily available from mainstream semiconductor materials.

experimental photovoltaicsoptoelectronic researchthin-film devices
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B1 Pb1 O3

semiconductorB1 Pb1 O3

B1Pb1O3 is a lead-based oxide semiconductor compound that belongs to the perovskite or perovskite-related ceramic family. This is a research-stage material studied for its electronic and structural properties rather than a widely commercialized industrial material. The compound is of interest in semiconductor physics and materials research for understanding lead oxide behavior in engineered ceramics, with potential applications in photovoltaic devices, ferroelectric components, or other functional ceramics, though practical deployment remains limited and material development is ongoing.

experimental semiconductorsperovskite researchphotovoltaic development
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B1 Pd2 Br1

semiconductorB1 Pd2 Br1

B1 Pd2 Br1 is an intermetallic compound combining palladium with bromine in a defined stoichiometric ratio, belonging to the broader class of metal halide semiconductors. This is a research-phase material primarily investigated for its electronic and optoelectronic properties rather than established industrial production. The palladium-bromine system is of interest in materials chemistry for potential applications in catalysis, solid-state electronics, and photonic devices, though practical engineering deployment remains limited while the material's phase stability, scalability, and performance benchmarking are still under development.

experimental semiconductor researchpalladium-based catalystsphotonic device development
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B1 Sb1

semiconductorB1 Sb1

B1Sb1 is an intermetallic semiconductor compound composed of boron and antimony in a 1:1 stoichiometric ratio. This material belongs to the III-V semiconductor family and is primarily of research interest for its potential in optoelectronic and high-temperature semiconductor applications. While not widely commercialized compared to established semiconductors like GaAs or InSb, B1Sb1 is investigated for specialized use cases where its electronic band structure and thermal stability characteristics may offer advantages in extreme environment applications or novel device architectures.

research semiconductorshigh-temperature electronicsoptoelectronic devices
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B1 Se2 Cl1

semiconductorB1 Se2 Cl1

B₁Se₂Cl₁ is a mixed halide-chalcogenide semiconductor compound combining boron, selenium, and chlorine elements. This material belongs to the broader family of layered semiconductor compounds and is primarily of research interest rather than established commercial production. The compound and related boron-selenium-halide systems are investigated for potential optoelectronic and photonic applications where mixed anion coordination offers tunable electronic properties, though engineering-scale deployment remains limited and material availability is restricted to specialized research settings.

experimental optoelectronicsphotonic research devicessemiconductor physics studies
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B1 Te2 As1

semiconductorB1 Te2 As1

B₁Te₂As₁ is a ternary semiconductor compound combining boron, tellurium, and arsenic—a relatively uncommon composition that sits at the intersection of chalcogenide and pnictide semiconductor families. This material is primarily of research and development interest rather than established high-volume production, with potential applications in optoelectronics and solid-state device engineering where the bandgap and thermal properties of mixed-anion semiconductors offer design flexibility not available in binary compounds.

experimental optoelectronicsinfrared detectorswide-bandgap semiconductors
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B1 Ti1

semiconductorB1 Ti1

B1 Ti1 is a titanium-based semiconductor compound, likely a binary titanium boride or intermetallic phase in the titanium-boron system. This material represents an emerging research compound rather than a widely commercialized engineering material; it is of interest in the semiconductor and advanced materials community for its potential electrical and thermal properties in high-temperature or specialized electronic applications. Researchers investigate such titanium-based semiconductors for niche roles where conventional semiconductors face thermal or chemical limitations, though industrial adoption remains limited.

experimental semiconductorshigh-temperature electronicsresearch compounds
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B1 Zr1

semiconductorB1 Zr1

B1 Zr1 is a zirconium-based semiconductor compound, likely referring to a zirconium boride or related intermetallic phase in the boron-zirconium system. This material family bridges metallic and ceramic properties, offering potential for high-temperature electronic and structural applications where conventional semiconductors reach performance limits. Research into boron-zirconium compounds focuses on their refractory characteristics and potential use in advanced device architectures, though B1 Zr1 remains primarily a research-phase material rather than a widely commercialized semiconductor.

high-temperature electronicsrefractory materials researchthermoelectric devices
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B28

semiconductor

B28 is a semiconductor material from the boron-based compound family, likely a boron nitride variant or boron-containing III-V semiconductor given its classification. While specific composition details are not provided, materials in this family are valued for their wide bandgap properties, high thermal stability, and electrical characteristics that distinguish them from conventional silicon-based semiconductors. B28 is typically employed in high-temperature electronics, power devices, and optoelectronic applications where thermal management and operational reliability above standard silicon limits are critical requirements.

high-temperature power electronicswide-bandgap semiconductor devicesthermal management applications
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B2 Al1 Cr2

semiconductorB2 Al1 Cr2

B2 Al1 Cr2 is an intermetallic compound featuring a B2 (CsCl-type) crystal structure, composed of aluminum and chromium. This material belongs to the aluminum-chromium intermetallic family, which is primarily of research and developmental interest rather than established in high-volume production. Intermetallics in this system are investigated for potential structural applications requiring high stiffness, oxidation resistance, and elevated-temperature stability, though processing challenges and brittleness at low temperatures have limited their industrial adoption compared to conventional superalloys and composite alternatives.

high-temperature structural components (research)aerospace material developmentintermetallic compound research
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B2 Al1 Fe2

semiconductorB2 Al1 Fe2

B₂Al₁Fe₂ is an intermetallic compound belonging to the iron-aluminum family, classified as a semiconductor with a layered crystal structure. This material is primarily of research interest rather than established in widespread industrial production, as intermetallics in this composition range are being investigated for lightweight structural applications and electronic device applications. The iron-aluminum intermetallic family is notable for combining low density with high stiffness and thermal stability, making it a candidate for high-temperature structural components and specialized electronic devices where conventional alloys fall short.

research semiconductor deviceshigh-temperature structural applicationslightweight intermetallic composites
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B2 Al1 Mn2

semiconductorB2 Al1 Mn2

B2 Al1 Mn2 is an intermetallic compound based on the B2 (CsCl-type) crystal structure, combining aluminum and manganese in a stoichiometric ratio. This material belongs to the family of ordered intermetallics, which are classified as semiconductors in this database context, though the B2 phase typically exhibits metallic character with potential semiconducting properties depending on processing and defect structure. Al-Mn intermetallics have been explored in research contexts for lightweight structural applications and functional materials, offering the potential for high strength-to-weight ratios characteristic of aluminum-based compounds, though practical industrial adoption remains limited compared to conventional alloys.

aerospace structural researchlightweight alloys developmenthigh-temperature intermetallic compounds
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B2 Al2 Mo2

semiconductorB2 Al2 Mo2

B2 Al2Mo2 is an intermetallic compound combining aluminum and molybdenum in a body-centered cubic (B2) crystal structure, representing an emerging material in the transition metal aluminide family. This compound is primarily of research and developmental interest for high-temperature structural applications where its metallic bonding and refractory character offer potential advantages over conventional superalloys. Its industrial adoption remains limited, but the B2 aluminide class is being explored for aerospace engine components, wear-resistant coatings, and high-temperature structural applications where conventional nickel-based superalloys face cost or performance limitations.

high-temperature structural componentsaerospace engine applicationswear-resistant coatings
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B2 Al2 Ru3

semiconductorB2 Al2 Ru3

B2 Al2Ru3 is an intermetallic compound combining aluminum and ruthenium in a B2 (CsCl-type) crystal structure, representing an experimental materials research composition rather than a commercial alloy. This class of intermetallic semiconductors is being investigated for high-temperature structural and electronic applications where conventional metals or oxides fall short, particularly in aerospace and catalysis research. The ruthenium-aluminum system offers potential advantages in oxidation resistance and thermodynamic stability at elevated temperatures, though practical applications remain largely in the research phase pending further development of processing routes and long-term performance validation.

high-temperature structural researchintermetallic compound developmentaerospace materials exploration
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B2 As1 P1

semiconductorB2 As1 P1

B₂As₁P₁ is an experimental III-V semiconductor compound combining boron, arsenic, and phosphorus in a binary-phase structure. This material belongs to the boron-based compound semiconductor family and represents research into mixed-pnictide systems with potential for wide bandgap applications. The B₂AsP composition is not yet commercialized at scale but is of interest for fundamental studies of electronic and optoelectronic properties in the III-V semiconductor space, where similar compounds (GaAs, InP) are well-established.

experimental semiconductor researchwide bandgap device developmenthigh-frequency electronics (potential)
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B2 As2

semiconductorB2 As2

B₂As₂ is an experimental III-V compound semiconductor in the boron-arsenic system, representing a research-phase material rather than a commercially established semiconductor. This material belongs to the broader family of binary semiconductors that show promise for high-performance optoelectronic and electronic applications, though it remains largely in the laboratory development stage. Engineers considering this compound should recognize it as a potential candidate for future wide-bandgap semiconductor devices, but would typically require collaboration with materials research groups and should expect limited commercial availability and well-characterized design data compared to mature semiconductors like GaAs or AlN.

experimental semiconductor researchIII-V compound developmenthigh-performance electronics (potential)
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B2 As4 Rb6

semiconductorB2 As4 Rb6

B2As4Rb6 is an experimental binary pnictide semiconductor compound containing rubidium and arsenic in a layered crystal structure, belonging to the family of alkali metal pnictides being explored in solid-state physics research. This material is primarily of academic and fundamental research interest rather than established industrial production, with potential applications in next-generation semiconductors, thermoelectrics, or quantum materials if synthesis and scalability challenges can be overcome. The compound's notable feature is its layered architecture, which may enable tunable electronic properties through strain engineering or intercalation—a characteristic that distinguishes it from conventional bulk semiconductors but requires further development before practical engineering deployment.

experimental semiconductorssolid-state physics researchthermoelectric materials development
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B2 Au1

semiconductorB2 Au1

B2 Au1 is an intermetallic compound combining boron and gold, classified as a semiconductor material with a B2 (CsCl-type) crystal structure. This is primarily a research material studied for its electronic and structural properties rather than a mainstream engineering material, belonging to the broader family of metal borides and gold-based intermetallics. Interest in B2 gold compounds centers on potential applications in advanced electronics, thermal management, and specialized high-performance environments where the unique electronic character of gold-boron interactions may offer advantages over conventional semiconductors or metallics.

research semiconductorsintermetallic compoundselectronic materials
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B2 Ba1 Ir2

semiconductorB2 Ba1 Ir2

B2 Ba1 Ir2 is an intermetallic compound combining barium and iridium in a B2 (CsCl-type) crystal structure, classified as a semiconductor. This is a research-phase material not yet established in commercial production; compounds in the barium-iridium system are primarily explored for their electronic and thermal properties in fundamental materials science. The B2 ordering and high iridium content suggest potential applications requiring materials with specific electronic band structures, thermal stability, or catalytic activity, though the material remains largely in the experimental stage pending demonstration of scalable synthesis and practical performance advantages over conventional semiconductors or intermetallics.

experimental semiconductor researchhigh-temperature intermetallicselectronic materials development
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B2 Ba1 O6 Ti1

semiconductorB2 Ba1 O6 Ti1

Barium titanate oxide (BaTiO₃ or Ba₁Ti₁O₆-type perovskite) is a ceramic semiconductor compound belonging to the perovskite family, known for its ferroelectric and piezoelectric properties. Industrial applications include capacitors, thermistors, sensors, and actuators, where its high dielectric constant and ferroelectric behavior at room temperature make it valuable for energy storage and electromechanical transduction. This material is also of significant interest in research for photocatalysis, ferroelectric memory devices, and lead-free piezoelectric alternatives, offering advantages over legacy lead-containing compounds in electronic and electromechanical systems.

multilayer ceramic capacitorspiezoelectric actuatorstemperature sensors
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B2 Br2 Mg4 N4

semiconductorB2 Br2 Mg4 N4

B2Br2Mg4N4 is an experimental boron-magnesium nitride compound with mixed halide incorporation, belonging to the broader family of wide-bandgap semiconductors and nitride ceramics. This material remains largely in the research phase, with potential applications in high-temperature electronics and optoelectronics where its nitride backbone and magnesium content may offer thermal stability and electrical tunability. The compound represents ongoing exploration into complex multi-element nitride semiconductors for next-generation device applications where conventional binary nitrides (GaN, AlN) reach performance limits.

Research/experimental semiconductorsHigh-temperature electronicsWide-bandgap optoelectronics
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B2 Br6

semiconductorB2 Br6

B2 Br6 is a boron-bromine compound semiconductor with a binary ionic crystal structure characteristic of intermetallic phases. This is a research-stage material primarily studied for its electronic and structural properties within the broader family of boron halide semiconductors. Interest in this compound centers on potential applications requiring wide bandgap semiconductors or specialized optical/electrical behavior, though commercial adoption remains limited compared to established semiconductor platforms like silicon or gallium arsenide.

experimental semiconductor researchwide-bandgap device developmentoptical material studies
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B2 C1 Ce1 Ir2

semiconductorB2 C1 Ce1 Ir2

B2C1Ce1Ir2 is an experimental intermetallic compound combining boron carbide with cerium and iridium elements, belonging to the family of advanced ceramic-metallic composites. This material remains primarily in research and development phases, with potential applications in high-temperature structural applications and catalytic systems where the rare-earth (cerium) and refractory metal (iridium) constituents could provide thermal stability, oxidation resistance, and catalytic activity. Engineers would consider this compound for specialized aerospace or chemical processing environments where conventional materials reach performance limits, though material consistency and manufacturability would require validation before industrial adoption.

high-temperature ceramics researchcatalytic applicationsaerospace experimental components
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B2 C1 Co2 Pr1

semiconductorB2 C1 Co2 Pr1

B2C1Co2Pr1 is an experimental intermetallic compound combining cobalt with praseodymium, boron, and carbon constituents, representing a rare-earth transition metal system under investigation for advanced functional applications. This material belongs to the broader family of rare-earth–transition metal intermetallics, which are of research interest for permanent magnets, high-temperature structural alloys, and electronic devices where magnetic ordering and thermal stability are critical. The inclusion of praseodymium (a strong ferromagnetic rare earth) and cobalt suggests potential for magnetic applications or enhanced mechanical properties at elevated temperatures, though the specific phase stability and performance characteristics of this particular composition remain largely exploratory.

permanent magnet researchhigh-temperature structural alloysrare-earth intermetallics
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B2 C1 N1

semiconductorB2 C1 N1

B₂CN is an advanced ceramic compound combining boron, carbon, and nitrogen—a ternary system that blends properties of boron nitride and boron carbide. This material remains largely experimental and is of primary interest in materials research for ultra-hard coatings, high-temperature ceramics, and wear-resistant applications where exceptional hardness and thermal stability are required. Its potential advantages over binary alternatives (pure BN or B₄C) include tunable hardness, improved thermal conductivity, and enhanced chemical resistance, making it a candidate for next-generation protective coatings and cutting-tool materials.

hard protective coatingscutting tool insertshigh-temperature ceramics
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B2 C1 Ni2 Ce1

semiconductorB2 C1 Ni2 Ce1

B2C1Ni2Ce1 is an intermetallic compound combining nickel with boron, carbon, and cerium elements, likely in the nickel-rich borocarbide family. This is a research-phase material studied for potential high-temperature structural and functional applications where the combination of refractory boron/carbon phases and rare-earth cerium can offer enhanced strength, thermal stability, or specialized electronic properties. The material remains primarily experimental rather than established in production engineering, but belongs to the broader class of rare-earth intermetallics and metal borocarbides being investigated for aerospace, energy, and advanced manufacturing contexts where conventional superalloys reach their limits.

high-temperature structural applicationsrare-earth intermetallic researchborocarbide compounds
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B2 C1 Ni2 Dy1

semiconductorB2 C1 Ni2 Dy1

B2C1Ni2Dy1 is an intermetallic compound combining nickel with dysprosium and boron–carbon phases, representing an experimental rare-earth transition metal composite. This material family is primarily of research interest for high-temperature structural applications and magnetic device components, where the rare-earth dysprosium content offers potential for enhanced thermal stability and magnetic properties compared to conventional nickel-based superalloys. The boron–carbon doping strategy is typical of efforts to strengthen intermetallic matrices for aerospace and energy applications, though commercialization remains limited.

high-temperature structural researchrare-earth intermetallic compoundsmagnetic device components
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B2 C1 Ni2 Er1

semiconductorB2 C1 Ni2 Er1

B2C1Ni2Er1 is an experimental intermetallic compound combining nickel with boron, carbon, and erbium—a rare-earth doped system designed for semiconductor or high-performance structural applications. This material family is primarily of research interest, with composition tuning aimed at exploring rare-earth strengthening effects in nickel-based systems or developing novel electronic properties through controlled doping. The addition of erbium to a boron–carbon–nickel matrix is unconventional and suggests investigation into either phonon engineering for thermoelectric behavior, magnetic properties, or ultra-high-strength aerospace/energy-sector materials.

experimental semiconductor researchrare-earth intermetallic compositeshigh-temperature structural materials
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B2 C1 Ni2 Ho1

semiconductorB2 C1 Ni2 Ho1

B2C1Ni2Ho1 is an experimental intermetallic compound combining nickel with boron, carbon, and holmium elements, classified as a semiconductor. This rare-earth-doped nickel-based intermetallic represents research-phase materials exploration rather than established production systems, with potential applications in high-temperature electronics or magnetic device applications leveraging holmium's rare-earth properties. The compound family is of primary interest to materials researchers investigating novel combinations of transition metals and rare earths for enhanced electronic or magnetic functionality.

Research and developmentHigh-temperature semiconductorsRare-earth intermetallics
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B2 C1 Ni2 Lu1

semiconductorB2 C1 Ni2 Lu1

B₂C₁Ni₂Lu₁ is an experimental intermetallic semiconductor compound combining boron carbide with nickel and lutetium. This material represents research into rare-earth-doped intermetallic phases, which are being investigated for high-temperature structural and electronic applications where conventional semiconductors reach their thermal limits. The lutetium addition is of particular interest for potential magnetoelectronic or thermoelectric properties, though this specific composition remains largely in the research phase rather than established industrial production.

High-temperature semiconductors (research)Rare-earth intermetallicsThermoelectric device development
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B2 C1 Ni2 Nd1

semiconductorB2 C1 Ni2 Nd1

B₂C₁Ni₂Nd₁ is an experimental intermetallic compound combining boron carbide with nickel and neodymium elements, belonging to the rare-earth strengthened intermetallic family. This material is primarily investigated in research contexts for high-temperature structural applications and magnetic applications, where the neodymium addition imparts magnetic properties while the boron carbide phase provides hardness and thermal stability. The compound represents an emerging approach to developing advanced materials that combine ceramic hardness with metallic toughness and functional magnetic properties, though it has not achieved widespread commercial adoption.

high-temperature composites (research phase)magnetic functional materialsrare-earth intermetallics
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B2 C1 Ni2 Pr1

semiconductorB2 C1 Ni2 Pr1

B2C1Ni2Pr1 is a quaternary intermetallic compound combining boron, carbon, nickel, and praseodymium (a rare-earth element). This is a research-stage material rather than an established commercial alloy, likely investigated for potential applications requiring high-temperature stability, magnetic properties, or catalytic behavior enabled by the rare-earth dopant. The compound belongs to the family of rare-earth transition-metal ceramics and intermetallics, which are of ongoing interest in materials science for advanced functional applications, though industrial deployment remains limited.

high-temperature ceramics (research)rare-earth functional materialsmagnetic compound development
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B2 C1 Ni2 Sm1

semiconductorB2 C1 Ni2 Sm1

B2C1Ni2Sm1 is an intermetallic compound combining nickel with boron, carbon, and samarium elements, representing a rare-earth-modified metallic system. This material falls within the family of advanced intermetallics and is primarily of research interest rather than established industrial production, with potential applications in high-temperature structural applications or magnetic systems leveraging samarium's rare-earth properties. Engineers would consider this material in exploratory projects targeting enhanced thermal stability, wear resistance, or specialized magnetic performance where conventional nickel-based alloys prove insufficient.

High-temperature structural applications (research phase)Rare-earth intermetallic researchMagnetic material development
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B2 C1 Ni2 Tb1

semiconductorB2 C1 Ni2 Tb1

B2C1Ni2Tb1 is an intermetallic compound containing nickel, terbium, boron, and carbon in a defined stoichiometric ratio. This is an experimental/research-phase material rather than a production material; compounds in this family are investigated for potential high-temperature structural applications and magnetic properties due to the rare-earth terbium content combined with transition metal strengthening from nickel and boron carbide phases.

High-temperature structural applications (research)Magnetic alloys developmentRare-earth intermetallic research
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B2 C1 Ni2 Tm1

semiconductorB2 C1 Ni2 Tm1

B2C1Ni2Tm1 is an experimental intermetallic compound combining nickel, boron, carbon, and thulium (a rare earth element) in a defined stoichiometric ratio. This material falls within the broader family of rare-earth transition metal borocarbides, which are being investigated for their potential hardness, thermal stability, and electronic properties at elevated temperatures. Research compounds of this type remain largely in early-stage development; engineering adoption is limited, making this material primarily of interest to materials scientists exploring novel superhard coatings, high-temperature structural applications, or specialized electronic devices where rare-earth transition metal synergy offers theoretical advantages over conventional alternatives.

research phase materialpotential hard coatingshigh-temperature structural study
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B2 C1 Ni2 Yb1

semiconductorB2 C1 Ni2 Yb1

B₂C₁Ni₂Yb₁ is an experimental intermetallic compound combining nickel, boron, carbon, and ytterbium. This material belongs to the rare-earth intermetallic family and is primarily of research interest rather than established industrial production; compounds in this class are investigated for potential applications requiring specific combinations of hardness, thermal stability, and electronic properties that conventional alloys cannot match.

research and developmenthigh-temperature structural materialssemiconductor device research
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B2 C1 Pr1 Pt2

semiconductorB2 C1 Pr1 Pt2

B2C1Pr1Pt2 is an experimental intermetallic compound combining boron carbide with praseodymium and platinum elements, likely developed for advanced high-temperature or specialized electronic applications. This material belongs to the rare-earth intermetallic family and represents early-stage research rather than established industrial production. The inclusion of platinum and rare-earth praseodymium suggests potential applications in catalysis, high-performance semiconductors, or thermal management systems where chemical stability and electronic properties at elevated temperatures are critical.

High-temperature semiconductorsCatalytic applicationsRare-earth electronics
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B2 C1 Pt2 Th1

semiconductorB2 C1 Pt2 Th1

B2C1Pt2Th1 is an intermetallic compound combining boron, carbon, platinum, and thorium elements, representing a research-phase material in the family of refractory intermetallics. This composition falls outside mainstream industrial production and appears primarily in academic or developmental contexts exploring high-temperature material systems; thorium-containing compounds are of historical interest for nuclear and aerospace applications, though modern development of thorium materials is limited. The platinum content suggests potential for high-temperature oxidation resistance or catalytic properties, making this compound a candidate for exploratory work in extreme-environment material science rather than established engineering practice.

nuclear fuel researchhigh-temperature coatings (experimental)refractory compound development
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B2 C1 Rh2 Ce1

semiconductorB2 C1 Rh2 Ce1

B₂C₁Rh₂Ce₁ is an experimental intermetallic compound combining boron carbide with rhodium and cerium elements, representing a multi-component ceramic-metallic hybrid material. This research-phase composition belongs to the family of advanced refractory intermetallics and is primarily investigated for high-temperature structural applications and catalytic systems where the combination of ceramic hardness (from boron carbide) and transition metal properties (from rhodium) offers potential advantages over conventional monolithic ceramics or single-phase metals.

high-temperature structural componentsrefractory applicationscatalytic substrates
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B2 C1 Rh2 Er1

semiconductorB2 C1 Rh2 Er1

B₂C₁Rh₂Er₁ is an intermetallic compound combining boron carbide with rhodium and erbium, representing a rare-earth transition metal ceramic in the experimental research phase. Materials in this family are investigated for ultra-high-temperature applications and advanced catalytic systems where conventional alloys fail, though industrial adoption remains limited pending further characterization and cost reduction. The incorporation of erbium (a rare-earth element) and noble-metal rhodium suggests potential for oxidation resistance and specialized chemical reactivity in extreme environments.

research and developmentultra-high-temperature materialscatalytic systems
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B2 C2

semiconductorB2 C2

B₂C₂ is an experimental boron-carbon ceramic compound belonging to the family of boron carbides, which are ultra-hard refractory materials. This research-phase material is being investigated for extreme-environment applications where exceptional hardness, thermal stability, and chemical resistance are required, though it remains largely in academic development and has not achieved significant commercial deployment compared to established boron carbide (B₄C) alternatives.

abrasive and grinding applicationsrefractory coatingsarmor and ballistic protection
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B2 C2 Dy2

semiconductorB2 C2 Dy2

B2C2Dy2 is an experimental intermetallic compound combining boron carbide chemistry with dysprosium, representing a rare-earth reinforced ceramic composite in the research phase. This material belongs to the family of hard ceramics and intermetallics being investigated for high-temperature structural applications where conventional ceramics show limitations in fracture toughness or thermal cycling resistance. The dysprosium addition is of interest to the nuclear and advanced reactor community due to dysprosium's neutron absorption properties, making this compound potentially relevant for radiation-hardened or neutron-shielding ceramic applications, though industrial adoption remains limited pending further development of processing and property characterization.

nuclear reactor componentsradiation shielding ceramicshigh-temperature structural research
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B2 C2 Ho2

semiconductorB2 C2 Ho2

B2C2Ho2 is an experimental rare-earth boron carbide compound combining holmium with boron and carbon phases, belonging to the family of rare-earth ceramic and intermetallic materials under active research. This material is primarily of academic and exploratory interest rather than established industrial production, with potential applications in high-temperature ceramics, neutron absorption, and advanced refractory systems where holmium's nuclear properties or rare-earth functionality could provide advantages over conventional alternatives.

experimental ceramics researchhigh-temperature refractory applicationsneutron shielding
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B2 C2 U2

semiconductorB2 C2 U2

B₂C₂U₂ is an experimental ternary compound combining boron, carbon, and uranium in a stoichiometric ratio, belonging to the broader family of ceramic and intermetallic semiconductors. This material remains largely in the research phase; it represents exploration of uranium-containing compounds for potential high-performance applications where extreme hardness, thermal stability, or nuclear properties may be relevant. Limited industrial deployment exists; the material's significance lies primarily in fundamental materials science investigating novel compositions in the boron–carbon–uranium phase space.

Advanced ceramics researchNuclear materials developmentSemiconductor device research
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B2 C3 N6

semiconductorB2 C3 N6

B₂C₃N₆ is an experimental boron-carbon-nitrogen compound belonging to the class of ternary ceramic semiconductors, combining elements from the boron nitride and boron carbide families. Research into this material focuses on its potential as a wide-bandgap semiconductor for high-temperature and high-power electronics, where its thermal stability and chemical inertness could offer advantages over conventional semiconductors. The material remains largely in development phase, with industrial applications not yet established; it represents ongoing exploration into alternative semiconductor platforms for extreme-environment device architectures.

High-temperature semiconductors (research)Wide-bandgap electronics (development)Power device materials (experimental)
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B2 C4 N2

semiconductorB2 C4 N2

B₂C₄N₂ is an experimental boron-carbon-nitride compound that combines elements from two important ceramic families: boron carbide and boron nitride. This ternary ceramic material is primarily a research-phase compound being investigated for its potential as an ultra-hard, thermally stable semiconductor with applications requiring extreme hardness and chemical resistance. The material remains largely in academic development, with potential applications in high-temperature electronics, wear-resistant coatings, and advanced abrasive systems, though industrial-scale production and deployment are not yet established.

high-temperature semiconductorswear-resistant coatingsadvanced abrasive applications
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B2 C6 K4 N6

semiconductorB2 C6 K4 N6

B₂C₆K₄N₆ is an experimental mixed-cation boron carbonitride compound combining potassium, boron, carbon, and nitrogen phases. This material belongs to the family of heteroatom-doped carbon and boron nitride ceramics under active research for functional and structural applications. Limited industrial deployment exists; the compound's potential lies in high-temperature ceramics, advanced catalysis, or energy storage applications where multi-element synergy could provide advantages over single-phase boron nitride or carbon materials.

experimental ceramics researchhigh-temperature compositescatalytic supports
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B2 C6 Lu6

semiconductorB2 C6 Lu6

B₂C₆Lu₆ is an experimental ternary ceramic compound composed of boron, carbon, and lutetium, belonging to the rare-earth boron carbide family of materials. This research-phase compound is investigated for potential applications requiring high-temperature stability and hardness, particularly in contexts where rare-earth doping of boron carbide systems offers enhanced properties compared to undoped alternatives. The material remains primarily in academic study and has not achieved widespread industrial adoption, but represents the broader class of rare-earth-modified carbides being explored for advanced refractory and wear-resistant applications.

high-temperature ceramics (research)wear-resistant coatings (exploratory)refractory materials (experimental)
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B2 Ca1 H10 N2

semiconductorB2 Ca1 H10 N2

This is a calcium borohydride compound (B₂Ca₁H₁₀N₂), a complex metal hydride belonging to the family of hydrogen storage materials. This is an experimental compound currently investigated in materials research rather than an established commercial material; it represents exploration of novel borohydride-based systems for potential energy storage applications.

hydrogen storage researchsolid-state energy storagematerials development
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B2 Ca3 Ni7

semiconductorB2 Ca3 Ni7

B2 Ca3Ni7 is an intermetallic compound with a B2-ordered crystal structure, composed primarily of calcium and nickel. This material represents an experimental research compound within the broader class of calcium-nickel intermetallics, which are of interest for their potential in hydrogen storage applications and as precursors for advanced functional materials.

hydrogen storage researchintermetallic studiesenergy materials development
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