B2 As1 P1

semiconductor

· B2 As1 P1

B₂As₁P₁ is an experimental III-V semiconductor compound combining boron, arsenic, and phosphorus in a binary-phase structure. This material belongs to the boron-based compound semiconductor family and represents research into mixed-pnictide systems with potential for wide bandgap applications. The B₂AsP composition is not yet commercialized at scale but is of interest for fundamental studies of electronic and optoelectronic properties in the III-V semiconductor space, where similar compounds (GaAs, InP) are well-established.

experimental semiconductor researchwide bandgap device developmenthigh-frequency electronics (potential)photonic materials (research phase)advanced materials characterizationcompound semiconductor systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	147.3	GPa	—
Shear Modulus(G)	144.1	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.288	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2170	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

B2 As1 P1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control