B₁Os₁O₃ is an experimental mixed-metal oxide compound containing boron and osmium in a ternary oxide system. This material belongs to the family of complex metal oxides being explored for semiconductor and electronic applications, though it remains primarily a research composition rather than a commercially established material. The combination of boron and osmium oxides suggests potential interest in high-temperature semiconductors, catalysis, or advanced ceramic applications where transition-metal oxides with unusual stoichiometries may offer unique electronic or structural properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00230 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.01000 | eV/atom | — |