ZrSnO2S — Properties & Data | MatWorld

ZrSnO2S

semiconductor

· ZrSnO2S

ZrSnO₂S is an experimental mixed-metal oxide-sulfide semiconductor combining zirconium, tin, oxygen, and sulfur elements. This quaternary compound belongs to the emerging class of anion-mixed semiconductors being investigated for photocatalytic and optoelectronic applications where bandgap engineering and defect chemistry offer tunable electronic properties. Research interest centers on photocatalysis (pollutant degradation, water splitting) and potential thin-film device applications, though it remains primarily a laboratory-scale material without established commercial production or widespread industrial deployment.

photocatalytic water treatmenthydrogen generation (water splitting)environmental remediationoptoelectronic devices (research phase)visible-light photocatalyststhin-film semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.371	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.400	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZrSnO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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