Zinc sulfide (ZnS) is a II-VI compound semiconductor with a zinc blende crystal structure, commonly available in both cubic (sphalerite) and hexagonal (wurtzite) phases. It is widely used in optoelectronic and photonic applications where its wide bandgap and optical transparency in the visible and infrared regions are critical advantages. ZnS serves as a phosphor material in displays and lighting, as a window or lens material in infrared imaging systems, and in thin-film solar cells and LEDs, where its direct bandgap makes it preferable to wider-gap alternatives like ZnO for certain wavelengths.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 68.25 | GPa | — | ||
| ↳ | 68.25 | GPa | — | ||
| ↳ | 72.53 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.8141 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.2909 | - | — | ||
| ↳ | 0.3100 | - | — | ||
Shear Modulus(G)3 entries | 33.16 | GPa | — | ||
| ↳ | 33.16 | GPa | — | ||
| ↳ | 35.18 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 36.50 | W/(m·K) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.035 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.690 | eV | — | ||
| ↳ | 2.095 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 9.100 | - | — | ||
| ↳ | 9.446 | - | — | ||
| ↳ | 7.559 range 6.124–8.994median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.03069 | C/m² | — | ||
| ↳ | 0.7871 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -11.75 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000500 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.063 | eV/atom | — | ||
| ↳ | -0.8863 | eV/atom | — |