Zinc sulfide (ZnS) is a II-VI compound semiconductor with a zinc blende crystal structure, commonly available in both cubic (sphalerite) and hexagonal (wurtzite) phases. It is widely used in optoelectronic and photonic applications where its wide bandgap and optical transparency in the visible and infrared regions are critical advantages. ZnS serves as a phosphor material in displays and lighting, as a window or lens material in infrared imaging systems, and in thin-film solar cells and LEDs, where its direct bandgap makes it preferable to wider-gap alternatives like ZnO for certain wavelengths.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 9,899.3 | ksi | DFT | ||
| ↳ | 10,519.6 | ksi | DFT · OptB88vdW | ||
| ↳ | 9,899.3 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.8141 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.3100 | - | DFT · OptB88vdW | ||
| ↳ | 0.2909 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 4,810.1 | ksi | DFT | ||
| ↳ | 5,102.4 | ksi | DFT · OptB88vdW | ||
| ↳ | 4,810.1 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 21.09 | BTU/(hr·ft·°F) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1458 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.690 | eV | Measured | ||
| ↳ | 2.086 | eV | DFT · OptB88vdW | ||
| ↳ | 3.592 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 9.446 | - | DFT · OptB88vdW | ||
| ↳ | 9.100 | - | DFT · PBE | ||
| ↳ | 7.559 range 6.124–8.994median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 6.249 | - | DFT · OptB88vdW | ||
| ↳ | 4.798 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.1900 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.9500 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.7871 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.03069 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000363 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00293 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -57.80 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 304.1 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.9300 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000500 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.8863 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -1.063 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data