Zinc oxide (ZnO) is a versatile inorganic semiconductor compound with a wide bandgap, available in both bulk and thin-film forms for functional applications. It is widely used in optoelectronics (LEDs, photodetectors), transparent conductive coatings, varistors for surge protection, and as a functional filler in rubber and ceramics; engineers select ZnO when combining electrical/optical functionality with thermal stability and low-cost manufacturability is critical. Its hexagonal wurtzite crystal structure and moderate mechanical stiffness make it suitable for piezoelectric applications and structural ceramics, while its transparency to visible light and tunable conductivity (through doping) enable its use in displays and energy harvesting devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 18,802.8 | ksi | DFT | ||
| ↳ | 19,918 | ksi | DFT · OptB88vdW | ||
| ↳ | 18,802.8 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.1324 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.3600 | - | DFT · OptB88vdW | ||
| ↳ | 0.3565 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 5,969.5 | ksi | DFT | ||
| ↳ | 5,998.8 | ksi | DFT · OptB88vdW | ||
| ↳ | 5,969.5 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 4.237 | BTU/(hr·ft·°F) | Measured | ||
| ↳ | 37.27 | BTU/(hr·ft·°F) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1995 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.440 | eV | Measured | ||
| ↳ | 0.9650 | eV | DFT · OptB88vdW | ||
| ↳ | 2.473 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 11.43 | - | DFT · OptB88vdW | ||
| ↳ | 11.35 | - | DFT · PBE | ||
| ↳ | 9.459 range 6.812–12.11median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 5.157 | - | DFT · OptB88vdW | ||
| ↳ | 3.145 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.2200 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.340 | me | DFT · OptB88vdW · 27°C | ||
Electrical Conductivity(σ) | 11.79 | S/cm | Measured · 427°C | ||
Electrical Resistivity(ρe) | 0.000848 | Ω·m | Measured · 427°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.7875 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.3787 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)3 entries | 0.0000301 | W/(m·K²) | Measured · 427°C | ||
| ↳ | 0.000424 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00157 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)3 entries | -159.9 | μV/K | Measured · 427°C | ||
| ↳ | -65.14 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 352.1 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 13.17 | % | DFT · TBmBJ | ||
Thermoelectric Figure of Merit(zT) | 0.000 | - | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -1.592 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -1.816 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data