ZnNbO₂N is an oxynitride semiconductor combining zinc, niobium, oxygen, and nitrogen phases—a compound that bridges traditional metal oxides and nitrides to achieve tunable electronic properties. This material is primarily investigated in research contexts for photocatalytic and photoelectrochemical applications, where its bandgap and band alignment show promise for water splitting, environmental remediation, and visible-light-driven reactions; it represents an emerging class of anionic-doped semiconductors that overcome some of the limitations of pure oxides (wide bandgap, poor visible absorption) by introducing nitrogen.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.600 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.000111 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3000 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data