ZnNbO2N

semiconductor

· ZnNbO2N

ZnNbO₂N is an oxynitride semiconductor combining zinc, niobium, oxygen, and nitrogen phases—a compound that bridges traditional metal oxides and nitrides to achieve tunable electronic properties. This material is primarily investigated in research contexts for photocatalytic and photoelectrochemical applications, where its bandgap and band alignment show promise for water splitting, environmental remediation, and visible-light-driven reactions; it represents an emerging class of anionic-doped semiconductors that overcome some of the limitations of pure oxides (wide bandgap, poor visible absorption) by introducing nitrogen.

photocatalytic water splittingenvironmental remediationvisible-light photocatalysisphotoelectrochemical cellsresearch semiconductorsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000111	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3000	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnNbO2N — Properties & Data | MatWorld

ZnNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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