ZnNbO2N
semiconductor· ZnNbO2N
ZnNbO₂N is an oxynitride semiconductor combining zinc, niobium, oxygen, and nitrogen phases—a compound that bridges traditional metal oxides and nitrides to achieve tunable electronic properties. This material is primarily investigated in research contexts for photocatalytic and photoelectrochemical applications, where its bandgap and band alignment show promise for water splitting, environmental remediation, and visible-light-driven reactions; it represents an emerging class of anionic-doped semiconductors that overcome some of the limitations of pure oxides (wide bandgap, poor visible absorption) by introducing nitrogen.
photocatalytic water splittingenvironmental remediationvisible-light photocatalysisphotoelectrochemical cellsresearch semiconductorsbandgap engineering
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.