ZnIn2Se4 is a ternary II-III-VI semiconductor compound combining zinc, indium, and selenium in a crystalline structure. This material belongs to the chalcogenide semiconductor family and is primarily investigated for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it a candidate for light emission, detection, and energy conversion devices. While not yet widely commercialized, ZnIn2Se4 represents a research-stage compound with potential to address niche applications where conventional binary semiconductors (like ZnSe or InSe) fall short in terms of bandgap engineering or defect tolerance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,073.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 2,937 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1897 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.950 | eV | — | ||
| ↳ | 0.9320 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 12.63 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5638 | C/m² | — | ||
Seebeck Coefficient(S) | -46.99 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5928 | eV/atom | — |