Zn0.55S0.55Ga0.45P0.45
semiconductorZn0.55S0.55Ga0.45P0.45 is a quaternary III-V semiconductor alloy combining zinc blende and gallium phosphide crystal structures, engineered to achieve specific bandgap properties intermediate between its binary constituents. This material is primarily of research interest for optoelectronic and high-frequency electronic devices, where precise bandgap engineering enables tuning of emission wavelengths and carrier transport characteristics compared to simpler binary or ternary semiconductors. The quaternary composition allows independent control of lattice constant and bandgap, making it valuable for heterostructure design in LEDs, laser diodes, and integrated photonic circuits operating in the visible to near-infrared spectrum.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |