Zn0.55S0.55Ga0.45P0.45

semiconductor

· Zn0.55S0.55Ga0.45P0.45

Zn0.55S0.55Ga0.45P0.45 is a quaternary III-V semiconductor alloy combining zinc blende and gallium phosphide crystal structures, engineered to achieve specific bandgap properties intermediate between its binary constituents. This material is primarily of research interest for optoelectronic and high-frequency electronic devices, where precise bandgap engineering enables tuning of emission wavelengths and carrier transport characteristics compared to simpler binary or ternary semiconductors. The quaternary composition allows independent control of lattice constant and bandgap, making it valuable for heterostructure design in LEDs, laser diodes, and integrated photonic circuits operating in the visible to near-infrared spectrum.

optoelectronic heterostructuresbandgap engineeringphotonic integrated circuitslight-emitting deviceshigh-frequency electronicsresearch-phase semiconductor materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.55S0.55Ga0.45P0.45

Electrical Properties

Regulatory Screening

Environmental

Export Control