Zn0.05Ga0.95Sb0.95Te0.05

semiconductor

· Zn0.05Ga0.95Sb0.95Te0.05

Zn0.05Ga0.95Sb0.95Te0.05 is a quaternary III-V semiconductor alloy based on gallium antimonide (GaSb) with small additions of zinc and tellurium, designed to engineer the bandgap and lattice parameters for specific optoelectronic applications. This material falls within the narrow-gap semiconductor family and is primarily explored in research contexts for infrared (IR) detectors and thermal imaging systems where precise bandgap tuning is required. The zinc and tellurium dopants modify the electronic structure relative to pure GaSb, offering potential advantages in mid-infrared wavelength ranges and for temperature-sensitive detector applications where alternative III-V compounds may be less optimal.

infrared detectorsthermal imaging sensorsnarrow-gap semiconductorsoptoelectronic researchbandgap engineeringphotovoltaic materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8500	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.05Ga0.95Sb0.95Te0.05

Electrical Properties

Regulatory Screening

Environmental

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