Zn0.05Ga0.95Sb0.95Te0.05
semiconductor· Zn0.05Ga0.95Sb0.95Te0.05
Zn0.05Ga0.95Sb0.95Te0.05 is a quaternary III-V semiconductor alloy based on gallium antimonide (GaSb) with small additions of zinc and tellurium, designed to engineer the bandgap and lattice parameters for specific optoelectronic applications. This material falls within the narrow-gap semiconductor family and is primarily explored in research contexts for infrared (IR) detectors and thermal imaging systems where precise bandgap tuning is required. The zinc and tellurium dopants modify the electronic structure relative to pure GaSb, offering potential advantages in mid-infrared wavelength ranges and for temperature-sensitive detector applications where alternative III-V compounds may be less optimal.
infrared detectorsthermal imaging sensorsnarrow-gap semiconductorsoptoelectronic researchbandgap engineeringphotovoltaic materials research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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