V2 Ni1 Te2 O10 — Properties & Data | MatWorld

V2 Ni1 Te2 O10

semiconductor

· V2 Ni1 Te2 O10

V2Ni1Te2O10 is a mixed-metal oxide semiconductor compound containing vanadium, nickel, and tellurium in a complex crystal structure. This is a research-phase material studied primarily for its electronic and catalytic properties rather than established industrial production. The compound belongs to the family of polymetallic tellurium oxides, which are of interest in solid-state chemistry for potential applications in energy conversion, catalysis, and electronic devices where the interplay between multiple metal centers can produce tunable electronic behavior.

Experimental semiconductor researchCatalytic materials developmentSolid-state electronicsEnergy conversion devicesPhotovoltaic studiesMaterials exploratory research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02650	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.713	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V2 Ni1 Te2 O10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control