V2 Ni1 Te2 O10
semiconductor· V2 Ni1 Te2 O10
V2Ni1Te2O10 is a mixed-metal oxide semiconductor compound containing vanadium, nickel, and tellurium in a complex crystal structure. This is a research-phase material studied primarily for its electronic and catalytic properties rather than established industrial production. The compound belongs to the family of polymetallic tellurium oxides, which are of interest in solid-state chemistry for potential applications in energy conversion, catalysis, and electronic devices where the interplay between multiple metal centers can produce tunable electronic behavior.
Experimental semiconductor researchCatalytic materials developmentSolid-state electronicsEnergy conversion devicesPhotovoltaic studiesMaterials exploratory research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.