TmAs is a compound semiconductor composed of thulium and arsenic, belonging to the III-V semiconductor family. This narrow-bandgap material is primarily of research interest for infrared optoelectronics and thermoelectric applications, where its properties enable detection and conversion of mid-to-long wavelength radiation. While not yet widely commercialized like GaAs or InAs, TmAs represents a specialized option for engineers developing advanced infrared sensors and thermal management systems that require materials with specific bandgap characteristics in the heavy rare-earth arsenic family.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 83.63 | GPa | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 61.52 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.619 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.180 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -10.80 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.560 | eV/atom | — |