TmAs — Properties & Data | MatWorld

TmAs

Name: TmAs
Brand: MatWorld

semiconductor

· TmAs

TmAs is a compound semiconductor composed of thulium and arsenic, belonging to the III-V semiconductor family. This narrow-bandgap material is primarily of research interest for infrared optoelectronics and thermoelectric applications, where its properties enable detection and conversion of mid-to-long wavelength radiation. While not yet widely commercialized like GaAs or InAs, TmAs represents a specialized option for engineers developing advanced infrared sensors and thermal management systems that require materials with specific bandgap characteristics in the heavy rare-earth arsenic family.

infrared sensors and detectorsthermoelectric devicesnarrow-bandgap semiconductorsrare-earth compound researchoptoelectronic materials developmentspecialized IR applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	12,129.5	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2200	-	DFT · OptB88vdW
Shear Modulus(G)	8,922.7	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.3114	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.180	eV	Measured
↳	0.000	eV	DFT · OptB88vdW
↳	0.000	eV	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000148	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.0000927	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-10.80	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	-8.680	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.560	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TmAs

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