Thallium nitride (TlN) is a compound semiconductor material belonging to the III-V nitride family, characterized by a rock-salt crystal structure. While primarily of research and academic interest, TlN has been investigated for potential applications in high-pressure devices, optoelectronic systems, and specialized semiconductor contexts where its unique electronic and mechanical properties may offer advantages over more common alternatives like GaN or AlN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,488.5 | ksi | — | ||
Poisson's Ratio(ν) | 0.3400 | - | — | ||
Shear Modulus(G) | 5,525.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3606 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.400 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 41.58 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 1.349 | C/m² | — | ||
Seebeck Coefficient(S) | -71.11 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.8828 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.8750 | eV/atom | — |