TiS₃ is a layered transition metal trichalcogenide semiconductor composed of titanium and sulfur in a 1:3 stoichiometry. This material is primarily of research interest rather than established industrial use, with potential applications in two-dimensional electronics and optoelectronics due to its layer-dependent properties and ability to be exfoliated into thin sheets. Engineers investigating TiS₃ are typically exploring it as an alternative to graphene and transition metal dichalcogenides (TMDs) for next-generation semiconductor devices where the material's unique electronic structure and mechanical compliance could enable flexible electronics, photovoltaic absorbers, or field-effect transistors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 18.90 | GPa | — | ||
| ↳ | 46.66 | GPa | — | ||
Exfoliation Energy(Eexf) | 54.49 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G)2 entries | 11.47 | GPa | — | ||
| ↳ | 29.97 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.177 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9000 | eV | — | ||
| ↳ | 0.3060 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 14.62 | - | — | ||
| ↳ | 30.21 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -201.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.096 | eV/atom | — |