TiS3

Name: TiS3
Brand: MatWorld

semiconductor

· TiS3

TiS₃ is a layered transition metal trichalcogenide semiconductor composed of titanium and sulfur in a 1:3 stoichiometry. This material is primarily of research interest rather than established industrial use, with potential applications in two-dimensional electronics and optoelectronics due to its layer-dependent properties and ability to be exfoliated into thin sheets. Engineers investigating TiS₃ are typically exploring it as an alternative to graphene and transition metal dichalcogenides (TMDs) for next-generation semiconductor devices where the material's unique electronic structure and mechanical compliance could enable flexible electronics, photovoltaic absorbers, or field-effect transistors.

2D materials researchflexible electronicsthin-film photovoltaicsfield-effect transistorsoptoelectronic sensorsvan der Waals heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	2,741.5	ksi	DFT
↳	6,767.5	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	54.49	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2600	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	1,663.8	ksi	DFT
↳	4,346.8	ksi	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1148	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.9000	eV	Measured
↳	0.3060	eV	DFT · OptB88vdW
↳	3.371	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	30.21	-	DFT · OptB88vdW
↳	14.62	-	DFT · PBE
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	13.48	-	DFT · OptB88vdW
↳	4.084	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.09000	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.09333	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00127	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00148	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-201.3	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	248.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	1.880	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.096	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TiS3 — Properties & Data | MatWorld

TiS3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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