Tantalum disulfide (TaS2) is a layered transition metal dichalcogenide ceramic compound that belongs to the family of two-dimensional materials with weak van der Waals bonding between atomic layers. While primarily a research material rather than an established commercial ceramic, TaS2 is investigated for applications requiring low-dimensional electronic properties, including thin-film electronics, energy storage devices, and catalytic applications. Its layered structure makes it particularly notable for exfoliation into ultrathin nanosheets, positioning it as a promising candidate for next-generation nanoelectronic and electrochemical devices where conventional bulk ceramics are impractical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 66.20 | GPa | — | ||
Exfoliation Energy(Eexf) | 78.46 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 41.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.906 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 20.50 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -9.567 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000100 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.223 | eV/atom | — | ||
| ↳ | -1.146 | eV/atom | — |