Tantalum disulfide (TaS2) is a layered transition metal dichalcogenide ceramic compound that belongs to the family of two-dimensional materials with weak van der Waals bonding between atomic layers. While primarily a research material rather than an established commercial ceramic, TaS2 is investigated for applications requiring low-dimensional electronic properties, including thin-film electronics, energy storage devices, and catalytic applications. Its layered structure makes it particularly notable for exfoliation into ultrathin nanosheets, positioning it as a promising candidate for next-generation nanoelectronic and electrochemical devices where conventional bulk ceramics are impractical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,601.5 | ksi | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 78.46 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2400 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 5,952.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2495 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 20.50 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000482 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000532 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | 10.38 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 10.00 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000100 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -1.146 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -1.223 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data