Tantalum pentachloride (TaCl5) is a halide ceramic precursor compound primarily used as a volatile source material rather than a final structural ceramic. In industry, it serves as a starting reagent for chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to synthesize tantalum oxide coatings and thin films, leveraging its high reactivity and vaporization characteristics. Engineers select TaCl5 over alternative tantalum precursors when precise, conformal thin-film deposition is required on complex geometries, particularly in semiconductor fabrication and protective coating applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.768 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.655 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -386.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.484 | eV/atom | — | ||
| ↳ | -1.375 | eV/atom | — |