Ta1 N1

semiconductor

· Ta1 N1

Ta₁N₁ (tantalum nitride) is a ceramic compound semiconductor in the refractory transition metal nitride family, characterized by high hardness and thermal stability. It is primarily used in microelectronics as a diffusion barrier and adhesion layer in copper interconnect systems, as well as in hard coatings for wear-resistant applications; its chemical inertness and high melting point make it valuable where conventional barriers fail in advanced semiconductor processing. The material is also explored for emerging applications in superconductivity research and energy storage devices due to its metallic-ceramic hybrid properties.

semiconductor interconnectsdiffusion barriershard protective coatingsintegrated circuit fabricationwear-resistant surfacesrefractory applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	345.2	GPa	—
Shear Modulus(G)	243.2	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1935	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.310	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control