Ta1 Bi3 O7
semiconductorTa₁Bi₃O₇ is an oxide semiconductor compound combining tantalum and bismuth, belonging to the class of mixed-metal oxides with potential photocatalytic and electronic properties. This material is primarily of research interest rather than established industrial production, investigated for applications in photocatalysis, optoelectronics, and environmental remediation where the bismuth-tantalum oxide system offers tunable bandgap characteristics. Engineers would consider this compound in experimental designs seeking alternatives to conventional semiconductors in UV-visible light harvesting or pollution control, though material availability and processing maturity remain limitations compared to conventional oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |