Ta1 Bi3 O7

semiconductor

· Ta1 Bi3 O7

Ta₁Bi₃O₇ is an oxide semiconductor compound combining tantalum and bismuth, belonging to the class of mixed-metal oxides with potential photocatalytic and electronic properties. This material is primarily of research interest rather than established industrial production, investigated for applications in photocatalysis, optoelectronics, and environmental remediation where the bismuth-tantalum oxide system offers tunable bandgap characteristics. Engineers would consider this compound in experimental designs seeking alternatives to conventional semiconductors in UV-visible light harvesting or pollution control, though material availability and processing maturity remain limitations compared to conventional oxide semiconductors.

photocatalytic water treatmentenvironmental remediationoptoelectronic devicesvisible-light photocatalystsresearch semiconductorsadvanced ceramics development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	17,249.8	ksi	—
Shear Modulus(G)	4,026.2	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.034	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.799	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Bi3 O7

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control