Ta1 Be1 O3

semiconductor

· Ta1 Be1 O3

Ta₁Be₁O₃ is an experimental mixed-metal oxide semiconductor combining tantalum and beryllium oxides in a defined stoichiometric ratio. This compound belongs to the family of complex metal oxides and represents early-stage research material, as it is not widely commercialized; such materials are typically investigated for potential applications in advanced electronics, photonics, or specialized functional ceramics where the combined properties of tantalum and beryllium oxides might offer advantages over conventional single-oxide semiconductors. Interest in this material class stems from potential for tunable electronic properties and high thermal stability, though practical applications remain largely in the research and development phase.

experimental semiconductorsoxide electronics researchhigh-temperature functional ceramicsphotonic materials developmentrefractory compoundsmaterials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	276.6	GPa	—
Shear Modulus(G)	113.1	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01350	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.956	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Be1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control