Ta1 Be1 O3
semiconductorTa₁Be₁O₃ is an experimental mixed-metal oxide semiconductor combining tantalum and beryllium oxides in a defined stoichiometric ratio. This compound belongs to the family of complex metal oxides and represents early-stage research material, as it is not widely commercialized; such materials are typically investigated for potential applications in advanced electronics, photonics, or specialized functional ceramics where the combined properties of tantalum and beryllium oxides might offer advantages over conventional single-oxide semiconductors. Interest in this material class stems from potential for tunable electronic properties and high thermal stability, though practical applications remain largely in the research and development phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |