SnO is a tin monoxide semiconductor with a layered crystal structure that exhibits moderate elastic stiffness and relatively low density. It is primarily investigated in research contexts for thin-film electronics, gas sensing, and transparent conductive oxide applications, where its tunable bandgap and native p-type conductivity offer advantages over more conventional semiconductors like SnO₂. Engineers consider SnO when designing low-cost, solution-processable devices or when the chemical and optical properties of tin oxide are advantageous—though commercial maturity remains limited compared to established semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 4,683.4 | ksi | DFT | ||
| ↳ | 6,935.7 | ksi | DFT · OptB88vdW | ||
| ↳ | 4,698.1 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 7.265 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Exfoliation Energy(Eexf) | 100.7 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.2500 | - | DFT · OptB88vdW | ||
| ↳ | 0.2290 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 2,932.1 | ksi | DFT | ||
| ↳ | 4,677.5 | ksi | DFT · OptB88vdW | ||
| ↳ | 3,103.1 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2200 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.000 | eV | Measured | ||
| ↳ | 0.3840 | eV | DFT · OptB88vdW | ||
| ↳ | 0.3040 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 22.02 | - | DFT · OptB88vdW | ||
| ↳ | 18.73 | - | DFT · PBE | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 6.943 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.000 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.5931 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 5.840 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01080 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -1.429 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -1.455 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data