SnGeS3 — Properties & Data | MatWorld

SnGeS3

Name: SnGeS3
Brand: MatWorld

semiconductor

· SnGeS3

SnGeS₃ is a ternary chalcogenide semiconductor compound combining tin, germanium, and sulfur—a material family of emerging interest for optoelectronic and photovoltaic applications. This is primarily a research-phase compound; it belongs to the broader class of IV–VI semiconductors that show promise for infrared detection, thermal imaging, and next-generation thin-film solar cells where conventional silicon or cadmium telluride have limitations. SnGeS₃ and related tin-germanium sulfides are investigated for their tunable bandgap, potential for solution-processing, and lower toxicity compared to lead-based perovskites, though industrial deployment remains limited and material synthesis and stability are still being optimized.

infrared detectorsthin-film photovoltaicsoptoelectronic devicesthermal imaging sensorsresearch photovoltaicsnext-generation solar cells

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	3.826	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.230	eV	Measured
↳	1.294	eV	DFT · OptB88vdW
↳	2.135	eV	DFT · TBmBJ
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	8.952	-	DFT · OptB88vdW
↳	6.745	-	DFT · TBmBJ
Electron Effective Mass(m*e)	1.047	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.067	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00119	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00113	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-230.5	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	186.8	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	20.04	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4514	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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SnGeS3

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