SnGeS₃ is a ternary chalcogenide semiconductor compound combining tin, germanium, and sulfur—a material family of emerging interest for optoelectronic and photovoltaic applications. This is primarily a research-phase compound; it belongs to the broader class of IV–VI semiconductors that show promise for infrared detection, thermal imaging, and next-generation thin-film solar cells where conventional silicon or cadmium telluride have limitations. SnGeS₃ and related tin-germanium sulfides are investigated for their tunable bandgap, potential for solution-processing, and lower toxicity compared to lead-based perovskites, though industrial deployment remains limited and material synthesis and stability are still being optimized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1382 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.230 | eV | — | ||
| ↳ | 1.294 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -230.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4514 | eV/atom | — |