Sn1 W2 O8

semiconductor

· Sn1 W2 O8

Sn₁W₂O₈ is a mixed-metal oxide semiconductor compound combining tin and tungsten oxides. This material belongs to the family of tungsten-based oxides, which are of significant research interest for optoelectronic and photocatalytic applications due to their tunable band gaps and chemical stability. While primarily studied in laboratory and developmental settings rather than large-scale industrial production, such tin-tungsten oxide compositions show promise as alternatives to conventional semiconductors in niche applications where their specific electronic properties or chemical resilience offer advantages over more mature materials.

photocatalytic applicationsoptoelectronic devicesgas sensingsemiconductor researchadvanced ceramics developmentenvironmental remediation materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	55.89	GPa	—
Shear Modulus(G)	37.07	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9816	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.014	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn1 W2 O8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control