Sn₁W₂O₈ is a mixed-metal oxide semiconductor compound combining tin and tungsten oxides. This material belongs to the family of tungsten-based oxides, which are of significant research interest for optoelectronic and photocatalytic applications due to their tunable band gaps and chemical stability. While primarily studied in laboratory and developmental settings rather than large-scale industrial production, such tin-tungsten oxide compositions show promise as alternatives to conventional semiconductors in niche applications where their specific electronic properties or chemical resilience offer advantages over more mature materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,106 | ksi | — | ||
Shear Modulus(G) | 5,377 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9816 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.014 | eV/atom | — |