Sn1 B1 O3

semiconductor

· Sn1 B1 O3

SnB₁O₃ is an experimental tin-boron oxide semiconductor compound that belongs to the broader family of mixed-metal oxide semiconductors. While not yet commercialized at scale, this material is of research interest for applications requiring stable wide-bandgap semiconducting behavior in oxidic systems, potentially offering alternatives to conventional oxide semiconductors in specialized applications. The tin-boron oxide system may be explored for optoelectronic devices, sensors, or high-temperature semiconductor applications where the chemical stability of multi-element oxides is advantageous.

wide-bandgap semiconductorsexperimental optoelectronicsoxide-based sensorshigh-temperature semiconductor researchmaterials discovery/prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	230.8	GPa	—
Shear Modulus(G)	123.1	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1339	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9920	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn1 B1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control