SnB₁O₃ is an experimental tin-boron oxide semiconductor compound that belongs to the broader family of mixed-metal oxide semiconductors. While not yet commercialized at scale, this material is of research interest for applications requiring stable wide-bandgap semiconducting behavior in oxidic systems, potentially offering alternatives to conventional oxide semiconductors in specialized applications. The tin-boron oxide system may be explored for optoelectronic devices, sensors, or high-temperature semiconductor applications where the chemical stability of multi-element oxides is advantageous.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33,474.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 17,848.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1339 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9920 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data