Sn₀.₅GaZn₄.₅O₇ is a mixed-metal oxide semiconductor combining tin, gallium, and zinc in a spinel-related crystal structure, representing an emerging compound in the wide-bandgap semiconductor family. This material is primarily of research and development interest for transparent electronics and optoelectronic applications where conventional indium tin oxide (ITO) alternatives are sought, leveraging the abundance and cost advantages of zinc and tin over indium. The gallium incorporation provides tunable electronic properties, making it a candidate for next-generation thin-film transistors, UV detectors, and transparent conductive oxide layers in advanced display and photovoltaic technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.000 | eV | — |