Sn0.5GaZn4.5O7
semiconductor· Sn0.5GaZn4.5O7
Sn₀.₅GaZn₄.₅O₇ is a mixed-metal oxide semiconductor combining tin, gallium, and zinc in a spinel-related crystal structure, representing an emerging compound in the wide-bandgap semiconductor family. This material is primarily of research and development interest for transparent electronics and optoelectronic applications where conventional indium tin oxide (ITO) alternatives are sought, leveraging the abundance and cost advantages of zinc and tin over indium. The gallium incorporation provides tunable electronic properties, making it a candidate for next-generation thin-film transistors, UV detectors, and transparent conductive oxide layers in advanced display and photovoltaic technologies.
transparent conductive coatingsthin-film transistorsUV photodetectorsdisplay electrodesphotovoltaic windowsresearch semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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