Silicon disulfide (SiS₂) is a layered ceramic compound composed of silicon and sulfur atoms arranged in a two-dimensional crystalline structure. This material is primarily of research interest rather than established in mainstream industrial applications, with potential use in nanoelectronics, optoelectronics, and energy storage devices where its layered geometry enables mechanical exfoliation into thin films. Engineers considering SiS₂ are typically exploring it as a wide-bandgap semiconductor, thermal insulator, or component in next-generation device architectures where its anisotropic properties and van der Waals bonding between layers may offer advantages over conventional ceramics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 24.47 | GPa | — | ||
| ↳ | 33.71 | GPa | — | ||
Exfoliation Energy(Eexf) | 85.99 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G)2 entries | 19.27 | GPa | — | ||
| ↳ | 26.13 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.320 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.086 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 4.020 | - | — | ||
| ↳ | 8.580 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.02040 | C/m² | — | ||
| ↳ | 0.4853 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -202.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.7372 | eV/atom | — | ||
| ↳ | -0.6803 | eV/atom | — |